Semiconductor Cavity Quantum Electrodynamics with Single Quantum Dots

• Authors: S. Reitzenstein , C. Schneider , S. Münch , C. Kistner , M. Strauss , A. Huggenberger , P. Franeck , P. Weinmann , M. Kamp , S. Höfling , L. Worschech , A. Forchel
• Languages of publication: EN

Abstracts

EN

This paper summarizes recent progress achieved in the field of semiconductor cavity quantum electrodynamics with single quantum dots with the focus being on micropillar cavities. Light-matter interaction both in the strong and weak coupling regime is presented. Resonance tuning of the quantum dot by temperature, electric fields and magnetic fields is demonstrated while the strong coupling regime can be reached. Additionally, deterministic device integration of single positioned quantum dots is reported by a combination of site controlled quantum dot growth via directed nucleation and subsequent device alignment to overcome the degree of randomness of the quantum dot position in so far most common quantum dot-cavity systems.

Keywords

EN

73.21.La; 71.35.Ji; 71.55.Eq; 37.30.+i

Discipline

• 71.55.Eq: III-V semiconductors
• 71.35.Ji: Excitons in magnetic fields; magnetoexcitons
• 73.21.La: Quantum dots
• 37.30.+i: Atoms, molecules, and ions in cavities(see also 42.50.Pq Cavity quantum electrodynamics; micromasers)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: 4
• Pages: 445-450

Dates

published

2009-10

Contributors

author

S. Reitzenstein

• Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

author

C. Schneider

• Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

author

S. Münch

• Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

author

C. Kistner

• Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

author

M. Strauss

• Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

author

A. Huggenberger

• Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

author

P. Franeck

• Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

author

P. Weinmann

• Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

author

M. Kamp

• Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

author

S. Höfling

• Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

author

L. Worschech

• Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

author

A. Forchel

• Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

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Identifiers

DOI

10.12693/APhysPolA.116.445