Transverse Acoustoelectric Effect Applying in Surface Study of GaP:Te(111)

• Authors: B. Pustelny , T. Pustelny
• Languages of publication: EN

Abstracts

EN

The possibility of using the transverse acoustoelectric phenomena in experimental investigations of near surface region in semiconductor crystals was discussed. The results of experimental investigations of GaP:Te(111) surfaces by means of the transverse acoustoelectric voltage were presented. Applying the transverse acoustoelectric voltage method, the lifetime τ of minority carrier in the near-surface region and the surface potential V_{s} in GaP:Te(111) surfaces after their different technological treatments were determined.

Keywords

EN

72.80.Ey; 73.61.Ey; 73.61.Jc; 85.30.-z; 71.20.Mq

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 85.30.-z: Semiconductor devices(for photodiodes, phototransistors, and photoresistors, see 85.60.Dw; for laser diodes, see 42.55.Px; for semiconductor-based solar cells, see 88.40.-j; for applications of dielectric films in silicon electronics, see 77.55.df)
• 73.61.Jc: Amorphous semiconductors; glasses
• 73.61.Ey: III-V semiconductors
• 71.20.Mq: Elemental semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: 3
• Pages: 383-384

Dates

published

2009-09

Contributors

author

B. Pustelny

• Institute of Physics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland

author

T. Pustelny

• Department of Optoelectronics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.116.383