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2009 | 116 | 3 | 383-384
Article title

Transverse Acoustoelectric Effect Applying in Surface Study of GaP:Te(111)

Content
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Languages of publication
EN
Abstracts
EN
The possibility of using the transverse acoustoelectric phenomena in experimental investigations of near surface region in semiconductor crystals was discussed. The results of experimental investigations of GaP:Te(111) surfaces by means of the transverse acoustoelectric voltage were presented. Applying the transverse acoustoelectric voltage method, the lifetime τ of minority carrier in the near-surface region and the surface potential V_{s} in GaP:Te(111) surfaces after their different technological treatments were determined.
Keywords
Year
Volume
116
Issue
3
Pages
383-384
Physical description
Dates
published
2009-09
References
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  • 11. W. Jakubik, E. Maciak, T. Pustelny, A. Stolarczyk, M. Urbanczyk, Mol. Quant. Acoust. 28, 125 (2007)
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv116n335kz
Identifiers
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