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2009 | 116 | 3 | 383-384
Article title

Transverse Acoustoelectric Effect Applying in Surface Study of GaP:Te(111)

Content
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EN
Abstracts
EN
The possibility of using the transverse acoustoelectric phenomena in experimental investigations of near surface region in semiconductor crystals was discussed. The results of experimental investigations of GaP:Te(111) surfaces by means of the transverse acoustoelectric voltage were presented. Applying the transverse acoustoelectric voltage method, the lifetime τ of minority carrier in the near-surface region and the surface potential V_{s} in GaP:Te(111) surfaces after their different technological treatments were determined.
Keywords
Contributors
author
  • Institute of Physics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland
author
  • Department of Optoelectronics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv116n335kz
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