Theoretical Study of Energy Levels and Transition Probabilities of Boron Atom

• Authors: Zhang Tian-yi , Zheng Neng-wu
• Languages of publication: EN

Abstracts

EN

Though the electrons configuration for boron atom is simple and boron atom has long been of interest for many researchers, the theoretical studies for properties of BI are not systematic, there are only few results reported on energy levels of high excited states of boron, and transition measurements are generally restricted to transitions involving ground states and low excited states without considering fine structure effects, provided only multiplet results, values for transitions between high excited states are seldom performed. In this article, by using the scheme of the weakest bound electron potential model theory calculations for energy levels of five series are performed and with the same method we give the transition probabilities between excited states with considering fine structure effects. The comprehensive set of calculations attempted in this paper could be of some value to workers in the field because of the lack of published calculations for the BI systems. The perturbations coming from foreign perturbers are taken into account in studying the energy levels. Good agreement between our results and the accepted values taken from NIST has been obtained. We also reported some values of energy levels and transition probabilities not existing on the NIST data bases.

Keywords

EN

01.55.+b; 31.15.-p

Discipline

• 31.15.-p: Calculations and mathematical techniques in atomic and molecular physics(see also 02.70.-c Computational techniques, in mathematical methods in physics)
• 01.55.+b: General physics

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: 2
• Pages: 141-153

Dates

published

2009-08

received

2009-04-20

Contributors

author

Zhang Tian-yi

• Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, P.R. China

author

Zheng Neng-wu

• Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, P.R. China

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Identifiers

DOI

10.12693/APhysPolA.116.141