Raman Spectroscopy for the Analysis οf Temperature-Dependent Plastic Relaxation οf SiGe Layers

• Authors: F. Pezzoli , E. Bonera , M. Bollani , S. Sanguinetti , E. Grilli , M. Guzzi , G. Isella , D. Chrastina , H. von Känel
• Languages of publication: EN

Abstracts

EN

Novel architectures for electronics and photonics are expected to be developed using the forthcoming Si_{1-x}Ge_{x} technology. However, in Si_{1-x}Ge_{x}-based heterostructures, materials and design issues rely on accurate control of strain and composition of the alloy. The Raman spectroscopy has rapidly emerged as a reliable technique for the quantitative determination of such parameters on a sub-micrometric scale. In this work we present an investigation of the effects of the growth conditions of Si_{1-x}Ge_{x} graded layers on dislocation nucleation and interaction. In particular, we focus on the crucial role the deposition temperature plays in the dislocation kinetics. The analysis of threading dislocation densities is accompanied by a quantitative measurement of the residual strain in Si_{1-x}Ge_{x}/Si heterostructures, carried out by means of the Raman scattering. Our approach is effective in studying the physical mechanism governing dislocation multiplication and the sharp transition from a state of brittleness to a state of ductility within a narrow temperature window.

Keywords

EN

61.72.Lk; 61.72.uf; 62.20.mj; 62.20.mm; 78.30.-j

Discipline

• 62.20.mm: Fracture
• 61.72.Lk: Linear defects: dislocations, disclinations
• 78.30.-j: Infrared and Raman spectra(for vibrational states in crystals and disordered systems, see 63.20.-e and 63.50.-x, respectively; for Raman spectra of superconductors, see 74.25.nd)
• 62.20.mj: Brittleness
• 61.72.uf: Ge and Si

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: 1
• Pages: 78-80

Dates

published

2009-07

Contributors

author

F. Pezzoli

• Institute for Integrative Nanosciences, IFW-Dresden, Helmholtzstr. 20, D-0169 Dresden, Germany

author

E. Bonera

• L-NESS, Dipartimento di Scienza dei Materiali della Università degli Studi di Milano-Bicocca, Via Cozzi 53, I-20125 Milano, Italy

author

M. Bollani

• L-NESS, Dipartimento di Scienza dei Materiali della Università degli Studi di Milano-Bicocca, Via Cozzi 53, I-20125 Milano, Italy

author

S. Sanguinetti

• L-NESS, Dipartimento di Scienza dei Materiali della Università degli Studi di Milano-Bicocca, Via Cozzi 53, I-20125 Milano, Italy

author

E. Grilli

• L-NESS, Dipartimento di Scienza dei Materiali della Università degli Studi di Milano-Bicocca, Via Cozzi 53, I-20125 Milano, Italy

author

M. Guzzi

• L-NESS, Dipartimento di Scienza dei Materiali della Università degli Studi di Milano-Bicocca, Via Cozzi 53, I-20125 Milano, Italy

author

G. Isella

• L-NESS, Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, I-22100, Como, Italy

author

D. Chrastina

• L-NESS, Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, I-22100, Como, Italy

author

H. von Känel

• L-NESS, Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, I-22100, Como, Italy

References

• 1. F. Schäffler, Semicond. Sci. Technol. 12, 1515 (1997)
• 2. F. Capasso, Science 235, 172 (1987)
• 3. D.J. Paul, Semicond. Sci. Technol. 19, R75 (2004)
• 4. G. Schuberth, F. Schäffler, M. Besson, G. Abstreiter, E. Gornik, Appl. Phys. Lett. 59, 3318 (1991)
• 5. K. Ismail, B.S. Meyerson, P.J. Wang, Appl. Phys. Lett. 58, 2117 (1991)
• 6. K. Ismail, J. Vac. Sci. Technol. B 14, 2776 (1996)
• 7. E. Kasper, K. Lyutovich, M. Bauer, M. Oehme, Thin Solid Films 336, 319 (1998)
• 8. F.K. LeGoues, B.S. Meyerson, J.F. Morar, Phys. Rev. Lett. 66, 2903 (1991)
• 9. M.S. Abrahams, L.R. Weisberg, C.J. Buiocchi, J. Blanc, J. Mater. Sci. 4, 223 (1969)
• 10. J. Tersoff, Appl. Phys. Lett. 62, 693 (1993); erratum ibid. 64, 2748 (1994)
• 11. E.A. Fitzgerald, Y.-H. Xie, M.L. Green, D. Brasen, A.R. Kortan, J. Michel, Y.-J. Mii, B.E. Weir, Appl. Phys. Lett. 59, 811 (1991)
• 12. E. Koppensteiner, P. Hamberger, G. Bauer, V. Holý, E. Kasper, Appl. Phys. Lett. 64, 172 (1994)
• 13. P.M. Mooney, J.L. Jordan-Sweet, J.O. Chu, F.K. LeGoues, Appl. Phys. Lett. 66, 3642 (1995)
• 14. M. Hohnisch, H.J. Herzog, F. Schäffler, J. Crystal Growth 157, 126 (1995)
• 15. E.A. Fitzgerald, Y.-H. Xie, D. Monroe, P.J. Silverman, J.M. Kuo, A.R. Kortan, F.A. Thiel, B.E. Weir, J. Vac. Sci. Technol. B 10, 1807 (1992)
• 16. S. Marchionna, A. Virtuani, M. Acciarri, G. Isella, H. von Känel, Mater. Sci. Semicond. Process. 9, 802 (2006)
• 17. M. Khantha, D.P. Pope, V. Vitek, Phys. Rev. Lett. 73, 684 (1994)
• 18. C. Rosenblad, H.R. Deller, A. Dommann, T. Meyer, P. Schroeter, H. von Känel, J. Vac. Sci. Technol. A 16, 2785 (1998)
• 19. J.C. Tsang, P.M. Mooney, F. Dacol, J.O. Chu, J. Appl. Phys. 75, 8098 (1994)
• 20. F. Pezzoli, E. Bonera, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl, G. Bauer, to be published in Mat. Sci. Semicond. Process., doi:10.1016/j.mssp.2008.09.012
• 21. F. Pezzoli, Lucio Martinelli, E. Grilli, M. Guzzi, S. Sanguinetti, M. Bollani, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl, G. Bauer, Mater. Sci. Eng. B 124-125, 127 (2005)
• 22. M. Khantha, D.P. Pope, V. Vitek, Mater. Sci. Eng. A 192-193, 435 (1995)
• 23. P.B. Hirsch, S.G. Roberts, Philos. Mag. A 64, 55 (1991)
• 24. P. Pirouz, A.V. Samant, M.H. Hong, A. Moulin, L.P. Kubin, J. Mater. Res. 14, 2783 (1999)
• 25. H.J. Herzog, in: Properties of Silicon Germanium and SiGe:Carbon, Eds. E. Kasper, K. Lyutovich, number 24, EMIS Datareviews, 1999, p. 45

Identifiers

DOI

10.12693/APhysPolA.116.78