Raman Scattering from ZnSe Nanolayers

• Authors: D. Nesheva , M. Šćepanović , S. Aškrabić , Z. Levi , I. Bineva , Z. Popović
• Languages of publication: EN

Abstracts

EN

A series of ZnSe single layers having thickness between 30 nm and 1 μm was deposited on c-Si and glass substrates at room substrate temperature. Thermal evaporation of ZnSe powder in high vacuum has been applied. Moreover, SiO_x/ZnSe periodic multilayers prepared by the same deposition technique and having ZnSe layer thickness of 2 and 4 nm have been studied. Raman spectra were measured at 295 K, using the 442 nm line of a He-Cd laser as well as different lines of the Ar^+ or Ar^+/Kr^+ lasers. The observed Raman features have been related to multiple optical phonon (1LO to 4LO) light scattering and connected with the existence of randomly oriented crystalline ZnSe grains in both ZnSe single layers and ZnSe layers of the multilayers. Relatively large line width ( ≈ 15 cm^{-1}) of the 1LO band has been observed and related to lattice distortion in the crystalline grains and existence of amorphous phase in the layers thinner than 100 nm. The Raman spectra measured on both ZnSe single layers and SiO_x/ZnSe multilayers using the 488 nm line with a gradually increased laser beam power indicate an increased crystallinity at high irradiation levels.

Keywords

EN

81.15.Ef; 81.05.Dz; 78.30.-j; 68.55.-a

Discipline

• 81.05.Dz: II-VI semiconductors
• 78.30.-j: Infrared and Raman spectra(for vibrational states in crystals and disordered systems, see 63.20.-e and 63.50.-x, respectively; for Raman spectra of superconductors, see 74.25.nd)
• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: 1
• Pages: 75-77

Dates

published

2009-07

Contributors

author

D. Nesheva

• Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd1784 Sofia, Bulgaria

author

M. Šćepanović

• Center for Solid State Physics and New Materials, Institute of Physics, Pregrevica 118, Belgrade 11080, Serbia

author

S. Aškrabić

• Center for Solid State Physics and New Materials, Institute of Physics, Pregrevica 118, Belgrade 11080, Serbia

author

Z. Levi

• Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd1784 Sofia, Bulgaria

author

I. Bineva

• Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd1784 Sofia, Bulgaria

author

Z. Popović

• Center for Solid State Physics and New Materials, Institute of Physics, Pregrevica 118, Belgrade 11080, Serbia

References

• 1. H. Shoji, Y. Nakata, K. Mukai, Y. Sugiyama, M. Sugawara, N. Yokoyama, H. Ishikawa Electron. Lett. 32, 2023 (1996)
• 2. P. Reiss, G. Quemard, S. Carayon, J. Bleuse, F. Chandezon, A. Pron, Mat. Chem. Phys. 84, 103 (2004)
• 3. D.S. Patil, D.K. Gautam, Physica B 344, 140 (2004)
• 4. E. Guziewicz, M. Godlewski, K. Kopalko, E. Lusakowska, E. Dynowska, M. Guziewicz, M.M. Godlewski, M. Phillips, Thin Solid Films 446, 172 (2004)
• 5. D. Nesheva, Z. Aneva, S. Reynolds, C. Main, A.G. Fizgerald, J. Optoel. Adv. Mater. 8, 2120 (2006)
• 6. M.J. Šcepanovic, M. Grujić-Brojčin, I. Bineva, D. Nesheva, Z. Aneva, Z. Levi, Z.V. Popović, J. Optoel. Adv. Mater. 9, 178 (2007)
• 7. D. Nesheva, in: Handbook of Surfaces and Interfaces of Materials, Ed. H.S. Nalwa, Vol. 3, Academic Press, San Diego 2001, p. 239
• 8. M. Cardona, G. Guntherodt, Light Scattering in Solids, Springer, New York 1982, p. 191
• 9. D. Nesheva, Z. Aneva, Z. Levi, N. Vuchkov, K. Temelkov, I. Bineva, Nanosc. Nanotechnol. 7, 83 (2007)
• 10. Y. Kanemitsu, A. Yamamoto, Hitoshi Matsue, Y. Masumoto, Sh. Yamaga, A. Yoshikawa, Appl. Phys. Lett. 60, 16 (1992)
• 11. D. Nesheva, M.J. Šcepanovic, Z. Levi, S. Askrabic, Z. Aneva, A. Petrova, Z.V. Popović, J. Optoel. Adv. Mater., accepted for publication

Identifiers

DOI

10.12693/APhysPolA.116.75