Micro-Raman Study of BiFeO_3 Thin Films Fabricated by Chemical Solution Deposition Using Different Bi/Fe Ratio Precursors

• Authors: T. Nakamura , H. Fukumura , N. Hasuike , H. Harima , Y. Nakamura , K. Kisoda , S. Nakashima , M. Okuyama
• Languages of publication: EN

Abstracts

EN

BiFeO_3 thin films were grown by chemical solution deposition using precursors with different elemental ratios, Bi/Fe = 1.1/1.0, 1.0/1.0 and 1.0/1.1. All the samples consisted of two easily distinguishable components of crystalline and amorphous phases. We have found that the electric properties of BiFeO_3 thin films are closely connected to the crystallinity of the films.

Keywords

EN

78.30.Hv; 63.20.D-; 78.30.-j

Discipline

• 78.30.-j: Infrared and Raman spectra(for vibrational states in crystals and disordered systems, see 63.20.-e and 63.50.-x, respectively; for Raman spectra of superconductors, see 74.25.nd)
• 78.30.Hv: Other nonmetallic inorganics
• 63.20.D-: Phonon states and bands, normal modes, and phonon dispersion

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: 1
• Pages: 72-74

Dates

published

2009-07

Contributors

author

T. Nakamura

• Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan

author

H. Fukumura

• Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan

author

N. Hasuike

• Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan

author

H. Harima

• Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan

author

Y. Nakamura

• Institute for Chemical Research, Kyoto University, Kyoto 611-0011, Japan

author

K. Kisoda

• Department of Physics, Wakayama University, Wakayama 640-8510, Japan

author

S. Nakashima

• Graduate School of Engineering Science, Osaka University, Osaka 560-8531, Japan

author

M. Okuyama

• Graduate School of Engineering Science, Osaka University, Osaka 560-8531, Japan

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Identifiers

DOI

10.12693/APhysPolA.116.72