DLC Coatings by PI^{3}D: Low-Voltage žersus High-Voltage Biasing

• Authors: H. Ryoo , S. Nikiforov , G. Rim , S. Shenderey , H. Oh , S. Chung
• Languages of publication: EN

Abstracts

EN

Diamond-like carbon (DLC), in particular hydrogenated amorphous carbon (a-C:H) films have been formed on various conductive and dielectric materials by plasma immersion ion implantation and deposition (PI^{3}D) processing. Effect of pulse voltage and other process parameters on the film properties was investigated. It was found that for conductive substrates, a low-voltage ( ≈1 kV), high repetition rate pulsing provides better overall film performance comparing to that obtained by applying higher voltages, which is also favourable for conformal treatment of 3D workpieces. However, short 1-2 μs, high-voltage 5-20 kV pulses are required for dielectric workpieces several millimeter thick. Good film adhesion was achieved by forming a Si-containing buffer layer using hexamethyldisiloxane (HMDSO) as a precursor and a low-voltage pulsing. Roughness and wettability of DLC coatings was found to be controlled by varying the bias specs and sample temperature. Very smooth films with average roughness less than 1 Å were prepared at optimised process parameters.

Keywords

EN

52.77.Dq; 68.35.Gy; 68.55.-a; 78.30.-j

Discipline

• 68.35.Gy: Mechanical properties; surface strains(for strain induced piezoelectric fields, see 77.65.Ly; for strain effects on ferroelectric phase transitions, see 77.80.bn)
• 52.77.Dq: Plasma-based ion implantation and deposition(see also 81.15.Jj Ion and electron beam-assisted deposition)
• 78.30.-j: Infrared and Raman spectra(for vibrational states in crystals and disordered systems, see 63.20.-e and 63.50.-x, respectively; for Raman spectra of superconductors, see 74.25.nd)
• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 115
• Issue: 6
• Pages: 1146-1148

Dates

published

2009-06

Contributors

author

H. Ryoo

• Korea Electrotechnology Research Institute (KERI), P.O. Box 20, Changwon, Republic of Korea

author

S. Nikiforov

• Korea Electrotechnology Research Institute (KERI), P.O. Box 20, Changwon, Republic of Korea

author

G. Rim

• Korea Electrotechnology Research Institute (KERI), P.O. Box 20, Changwon, Republic of Korea

author

S. Shenderey

• Korea Electrotechnology Research Institute (KERI), P.O. Box 20, Changwon, Republic of Korea

author

H. Oh

• Korea Electrotechnology Research Institute (KERI), P.O. Box 20, Changwon, Republic of Korea

author

S. Chung

• Korea Electrotechnology Research Institute (KERI), P.O. Box 20, Changwon, Republic of Korea

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Identifiers

DOI

10.12693/APhysPolA.115.1146