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2009 | 115 | 6 | 1146-1148
Article title

DLC Coatings by PI^{3}D: Low-Voltage žersus High-Voltage Biasing

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EN
Abstracts
EN
Diamond-like carbon (DLC), in particular hydrogenated amorphous carbon (a-C:H) films have been formed on various conductive and dielectric materials by plasma immersion ion implantation and deposition (PI^{3}D) processing. Effect of pulse voltage and other process parameters on the film properties was investigated. It was found that for conductive substrates, a low-voltage ( ≈1 kV), high repetition rate pulsing provides better overall film performance comparing to that obtained by applying higher voltages, which is also favourable for conformal treatment of 3D workpieces. However, short 1-2 μs, high-voltage 5-20 kV pulses are required for dielectric workpieces several millimeter thick. Good film adhesion was achieved by forming a Si-containing buffer layer using hexamethyldisiloxane (HMDSO) as a precursor and a low-voltage pulsing. Roughness and wettability of DLC coatings was found to be controlled by varying the bias specs and sample temperature. Very smooth films with average roughness less than 1 Å were prepared at optimised process parameters.
Keywords
Contributors
author
  • Korea Electrotechnology Research Institute (KERI), P.O. Box 20, Changwon, Republic of Korea
author
  • Korea Electrotechnology Research Institute (KERI), P.O. Box 20, Changwon, Republic of Korea
author
  • Korea Electrotechnology Research Institute (KERI), P.O. Box 20, Changwon, Republic of Korea
author
  • Korea Electrotechnology Research Institute (KERI), P.O. Box 20, Changwon, Republic of Korea
author
  • Korea Electrotechnology Research Institute (KERI), P.O. Box 20, Changwon, Republic of Korea
author
  • Korea Electrotechnology Research Institute (KERI), P.O. Box 20, Changwon, Republic of Korea
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv115n666kz
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