Laser Assisted Au Nanocrystal Formation in Conditions of Surface Plasmon Resonance

• Authors: L. Fedorenko , B. Snopok , M. Yusupov , O. Lytvyn , Yu. Burlachenko
• Languages of publication: EN

Abstracts

EN

The possibility of the calibrated Au nanoparticles formation in conditions of surface plasmon resonance at irradiation of the Au film/glass structure by pulsed YAG:Nd^{3+}-laser radiation is investigated. Sizes of the Au fragments and their surface distribution were studied by the atom force microscopy. The effect of Au nanofragmentation was observed only at the second harmonic irradiation (λ = 0.532 μm). The large difference in the average values of Au nanoparticles sizes -[δ] and distributions between created in the resonance conditions, R = R_{min}, -[δ] ∼ 80 nm and in case out of resonance R ≠ R_{min}, -[δ] ∼ 1350 nm was established. A high degree of the height sizes homogeneity of Au nanoparticles has been shown by the histogram obtained from the atom force microscopy data. There was verified the conclusion about determining contribution of the plasmon subsystem field in nanofragmentation process of the Au film in the SPR conditions at high laser levels.

Keywords

EN

81.05.Bx; 81.16.Mk; 81.07.-b

Discipline

• 81.07.-b: Nanoscale materials and structures: fabrication and characterization(for structure of nanoscale materials, see 61.46.-w; for nanostructured materials in electrochemistry, see 82.45.Yz; see also 62.23.-c Structural classes of nanoscale systems in mechanical properties of condensed matter)
• 81.16.Mk: Laser-assisted deposition
• 81.05.Bx: Metals, semimetals, and alloys

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 115
• Issue: 6
• Pages: 1075-1077

Dates

published

2009-06

Contributors

author

L. Fedorenko

• V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine

author

B. Snopok

• V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine

author

M. Yusupov

• V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine

author

O. Lytvyn

• V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine

author

Yu. Burlachenko

• V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine

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Identifiers

DOI

10.12693/APhysPolA.115.1075