Dynistor Switches for Micro- and Nanosecond Power Pulse Generators

• Authors: Yu. Aristov , I. Grekhov , S. Korotkov , A. Lyublinsky
• Languages of publication: EN

Abstracts

EN

Gigawatt power switches for microsecond range applications based on an assembly of Reverse Switch-on Dynistors (RSD) and fast compact generators for nanosecond range applications based on new semiconductor devices Deep Level Dynistors (DLD) are discussed. As an example design and operation principles of 25 kV, 300 kA, 600 μs pulse duration power switch based on 76 mm diameter RSDs and 25 kV, 10 kA switch based on 16 mm diameter DLDs are described. It is possible to increase the pulse power by increasing both diameter of dynistor structure and number of devices connected in series or in parallel.

Keywords

EN

84.70.+p; 84.30.Ng; 85.30.-z; 85.30.De

Discipline

• 85.30.De: Semiconductor-device characterization, design, and modeling
• 85.30.-z: Semiconductor devices(for photodiodes, phototransistors, and photoresistors, see 85.60.Dw; for laser diodes, see 42.55.Px; for semiconductor-based solar cells, see 88.40.-j; for applications of dielectric films in silicon electronics, see 77.55.df)
• 84.70.+p: High-current and high-voltage technology: power systems; power transmission lines and cables(for superconducting cables, see 84.71.Fk)
• 84.30.Ng: Oscillators, pulse generators, and function generators

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 115
• Issue: 6
• Pages: 1031-1033

Dates

published

2009-06

Contributors

author

Yu. Aristov

• Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Polytechnicheskaya, St. Petersburg, 194021 Russia

author

I. Grekhov

• Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Polytechnicheskaya, St. Petersburg, 194021 Russia

author

S. Korotkov

• Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Polytechnicheskaya, St. Petersburg, 194021 Russia

author

A. Lyublinsky

• Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Polytechnicheskaya, St. Petersburg, 194021 Russia

References

• 1. I.V. Grekhov, A.V. Gorbatyuk, L.S. Kostina, S.V. Korotkov, N.S. Iakovtchuk, Solid State Electron. 26, 1132 (1983)
• 2. Yu.V. Aristov, V.B. Voronkov, I.V. Grekhov, A.L. Zhmodikov, A.K. Kozlov, S.V. Korotkov, I.A. Rol'nik, Instrum. Exp. Techniques 50, 228 (2007)
• 3. I.V. Grekhov, S.V. Korotkov, P.B. Rodin, IEEE Trans. Plasma Sci. 36, 378 (2008)
• 4. Yu.V. Aristov, V.B. Voronkov, I.V. Grekhov, A.K. Kozlov, S.V. Korotkov, A.G. Lyublinskii, Instrum. Exp. Techniques 50, 224 (2007)
• 5. I.V. Grekhov, V.M. Efanov, A.F. Kardo-Susoev, S.V. Shenderey, Solid State Electron. 28, 597 (1985)

Identifiers

DOI

10.12693/APhysPolA.115.1031