Improving Triggering Characteristics for a Surface-Flashover Triggered Vacuum Switch

• Authors: Z. He , L. Wang , F. Li , W. Yao , M. Dong , C. Zhao
• Languages of publication: EN

Abstracts

EN

A surface-breakdown triggered vacuum switch with parallel disk electrodes and semiconductor surface flashover trigger electrode has many advantages, it is easy to be triggered and machined. The resistance of the trigger gap has been increased in terms of modifying the thickness of the semiconductor layer and improving coating process technology. The trigger gap resistance, trigger voltage and trigger waveforms were experimentally tested. The results show that the triggering characteristics can be improved by increasing the trigger resistance.

Keywords

EN

52.80.Vp; 52.75.Kq; 52.25.Mq

Discipline

• 52.25.Mq: Dielectric properties
• 52.80.Vp: Discharge in vacuum
• 52.75.Kq: Plasma switches (e.g., spark gaps)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 115
• Issue: 6
• Pages: 1019-1021

Dates

published

2009-06

Contributors

author

Z. He

• College of Electrical and Electronic Engineering, Huazhong University of Science and Technology, 1037, Luoyu Rd., Wuhan, 430074, China

author

L. Wang

• College of Electrical and Electronic Engineering, Huazhong University of Science and Technology, 1037, Luoyu Rd., Wuhan, 430074, China

author

F. Li

• College of Electrical and Electronic Engineering, Huazhong University of Science and Technology, 1037, Luoyu Rd., Wuhan, 430074, China

author

W. Yao

• College of Electrical and Electronic Engineering, Huazhong University of Science and Technology, 1037, Luoyu Rd., Wuhan, 430074, China

author

M. Dong

• College of Electrical and Electronic Engineering, Huazhong University of Science and Technology, 1037, Luoyu Rd., Wuhan, 430074, China

author

C. Zhao

• College of Electrical and Electronic Engineering, Huazhong University of Science and Technology, 1037, Luoyu Rd., Wuhan, 430074, China

References

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• 3. G.A. Farrall, IEEE Trans. Electron Devices ED- 13, 432 (1966)
• 4. L.M.J. Vries, G.C. Damstra, IEEE Trans. Power Syst. PWRD-1, 75 (1986)
• 5. Z.Y. Zhou, C. Zhao, H.J. Dong, M.F. Liao, Vacuum 44, 58 (2007)

Identifiers

DOI

10.12693/APhysPolA.115.1019