Development of 60 kV, 300 A, 3 kHz Pulsed Power Modulator for Wide Applications

• Authors: H. Ryoo , S. Jang , G. Goussev , G. Rim
• Languages of publication: EN

Abstracts

EN

In this paper, a novel pulsed power generator based on IGBT stacks is proposed for wide pulsed power applications. Because it can generate high voltage pulsed output without any step-up transformer or pulse forming network, it has advantages of fast rising time, easiness of pulse width variation, high repetition rate and rectangular pulse shapes. Proposed scheme consists of multiple power stages which were charged parallel from series resonant power inverter. Depending on the number of power stages it can increase maximum voltage up to 60 kV or higher with no limits of power stages. To reduce component for gate power supply, a simple and robust gate drive circuit which delivers gate power and gate signal simultaneously by way of one high voltage cable is proposed. For gating signal and power a full bridge inverter and pulse transformer generates on-off signals of IGBT gating with gate power simultaneously and it has very good characteristics of protection of IGBT switches over arcing condition. It can be used for various kinds of pulse power application such as plasma source ion implantation, sterilization, water and gas treatment which requires few kHz pulse repetition rate with few to ten of microseconds pulse width.

Keywords

EN

84.30.Jc; 84.30.Ng; 84.30.Sk

Discipline

• 84.30.Jc: Power electronics; power supply circuits(see also 84.70.+p High-current and high-voltage technology; for superconducting high-power technology, see 84.71.-b)
• 84.30.Sk: Pulse and digital circuits
• 84.30.Ng: Oscillators, pulse generators, and function generators

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 115
• Issue: 6
• Pages: 967-970

Dates

published

2009-06

Contributors

author

H. Ryoo

• KERI, Changwon, Korea

author

S. Jang

• University of Science & Technology, Daejeon, Korea

author

G. Goussev

• KERI, Changwon, Korea

author

G. Rim

• KERI, Changwon, Korea

References

• 1. D. Deb, J. Siambis, R. Symons, G. Genovese, Beam Switch Tube Modulator Technology For Plasma Ion Implantation Broad Industrial Application, 9th IEEE International Pulsed Power Conference, 1993
• 2. D.M. Goebel, R.J. Adler, D.F. Beals, W.A. Reass, Handbook of Plasma Immersion Ion Implantation and Deposition, Ed. André Anders, Wiley, New York 2000
• 3. R.J. Adler, J. Scheuer, W. Horne, Thyratron modulators in plasma source ion implantation, 10th IEEE International Pulsed Power Conference, 1995, p. 1243
• 4. Dan M. Goebel, J. Vac. Sci. Technol. 12, 838 (1994)
• 5. J.H. Kim, C.G. Park, M.H. Ryoo, S. Sheuderey, J.S. Kim, G.H. Rim, IGBT Stacks Based Pulsed Power Generator for PSII&D, 15th IEEE International Pulsed Power Conference, 2005, p. 1065
• 6. G.H. Rim et al., Semiconductor switch based pulsed power generator for plasma source ion implantation, IEEE International Power Modulator Conference, 2004, p. 378
• 7. G.H. Rim et al., Solid state Marx generator using series connected IGBTs, IEEE International Power Modulator Conference, 2004, p. 1098
• 8. H.J. Ryoo, J.S. Kim, G.H. Rim, D. Sytykh, G. Gussev, Development of 60 kV Pulse Power Generator Based on IGBT Stacks for Wide Application, Conference Record of the 27th International Volume, of Power Modulator Symposium 2006, p. 511

Identifiers

DOI

10.12693/APhysPolA.115.967