On the Role of Radicals in Kinetics of Plasma Etchers in Ar/CF_4 Mixtures

• Authors: Ž. Nikitović , V. Stojanović , Z. Petrović
• Languages of publication: EN

Abstracts

EN

In this paper we present the transport coefficients in Ar/CF_4 mixtures with realistic abundances of CF_x radicals, F atoms, and F_2 molecules that are standard products of plasma chemistry in plasma etching systems and are present in large abundances of the order of few percent in realistic plasma etching devices. It was found that, although radicals make a minimum impact on distribution function and mean energy, the effect on drift velocity is significant and the effect on rates of attachment is large and may change the mode of operation of plasmas.

Keywords

EN

51.10.+y; 51.50.+v; 52.25.Fi; 82.20.Pm

Discipline

• 51.10.+y: Kinetic and transport theory of gases(see also 05.20.Dd Kinetic theory in classical statistical mechanics; see also 47.70.Mc Radiation gas dynamics)
• 82.20.Pm: Rate constants, reaction cross sections, and activation energies
• 51.50.+v: Electrical properties (ionization, breakdown, electron and ion mobility, etc.)(see also 52.80.-s Electric discharges in physics of plasmas)
• 52.25.Fi: Transport properties

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 115
• Issue: 4
• Pages: 765-767

Dates

published

2009-04

Contributors

author

Ž. Nikitović

• Institute of Physics, Pregrevica 118, 11080 Belgrade, Serbia

author

V. Stojanović

• Institute of Physics, Pregrevica 118, 11080 Belgrade, Serbia

author

Z. Petrović

• Institute of Physics, Pregrevica 118, 11080 Belgrade, Serbia

References

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Identifiers

DOI

10.12693/APhysPolA.115.765