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2009 | 115 | 4 | 765-767
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On the Role of Radicals in Kinetics of Plasma Etchers in Ar/CF_4 Mixtures

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In this paper we present the transport coefficients in Ar/CF_4 mixtures with realistic abundances of CF_x radicals, F atoms, and F_2 molecules that are standard products of plasma chemistry in plasma etching systems and are present in large abundances of the order of few percent in realistic plasma etching devices. It was found that, although radicals make a minimum impact on distribution function and mean energy, the effect on drift velocity is significant and the effect on rates of attachment is large and may change the mode of operation of plasmas.
  • Institute of Physics, Pregrevica 118, 11080 Belgrade, Serbia
  • Institute of Physics, Pregrevica 118, 11080 Belgrade, Serbia
  • Institute of Physics, Pregrevica 118, 11080 Belgrade, Serbia
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