Codoping Effect of Zn and Pr in YBa_2Cu_3O_{7-δ}

• Authors: M. Naik , P. Sarode , R. Prabhu , K. Priolkar , N. Vasanthacharya
• Languages of publication: EN

Abstracts

EN

In this paper we present the resistivity data for Pr and Zn codoped compound Y_{1-x}Pr_xBa_2[Cu_{1- y}Zn_y]_3O_{7-δ} with 0 & y & 0.1 and x=0.0, 0.1 and 0.2. The data is analysed in terms of the superconducting critical temperature T_c, residual resistivity ρ_0 and the resistivity slope dρ/dT corresponding to the linear ρ-T region. It is found that for x=0.1 Pr has a minimal influence on the in-plane processes for Zn impurity alone affecting slightly T_c and ρ_0. The slope dρ/dT becomes larger for 0.03 & y & 0.06 leading to larger depining effect and hence slower fall of T_c as a function of y. For x = 0.2 there is a drastic change, ρ_0 becomes abnormally large, dρ/dT becomes negative implying absence of depinning and a totally pinned charge stripes. Superconductivity vanishes at y=0.03. It is concluded that for x = 0.2 Pr converts the system from overdoped to underdoped region leading to the universal superconductor-insulator transition.

Keywords

EN

74.62.Bf; 74.62.Dh; 74.72.Bk

Discipline

• 74.62.Bf: Effects of material synthesis, crystal structure, and chemical composition(for methods of materials synthesis, see 81.20.-n)
• 74.62.Dh: Effects of crystal defects, doping and substitution(for specific crystal defects, see 61.72.-y)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 115
• Issue: 3
• Pages: 742-744

Dates

published

2009-03

received

2008-10-10

(unknown)

2008-12-12

Contributors

author

M. Naik

• Department of Physics, Goa University, Taleigao Plateau, Goa 403 206, India

author

P. Sarode

• Department of Physics, Goa University, Taleigao Plateau, Goa 403 206, India

author

R. Prabhu

• Department of Physics, Goa University, Taleigao Plateau, Goa 403 206, India

author

K. Priolkar

• Department of Physics, Goa University, Taleigao Plateau, Goa 403 206, India

author

N. Vasanthacharya

• Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560 012, India

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Identifiers

DOI

10.12693/APhysPolA.115.742