Deep Traps Distribution in TlInS_2 Layered Crystals

• Authors: M. Isik , N. Gasanly , H. Ozkan
• Languages of publication: EN

Abstracts

EN

The trap centers and distributions in TlInS_2 were studied in the temperature range of 100-300 K by using thermally stimulated currents technique. Experimental evidence was found for the presence of three trapping centers with activation energies 400, 570, and 650 meV. Their capture cross-sections were determined as 6.3 × 10^{-16}, 2.7× 10^{-12}, and 1.8× 10^{-11} cm^{2}, respectively. It was concluded that in these centers retrapping is negligible as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. An exponential distribution of hole traps was revealed from the analysis of the thermally stimulated current data obtained at different light excitation temperatures. This experimental technique provided a value of 800 meV/decade for the trap distribution.

Keywords

EN

71.55.-i; 72.20.Jv; 72.80.Jc

Discipline

• 72.80.Jc: Other crystalline inorganic semiconductors
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping
• 71.55.-i: Impurity and defect levels

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 115
• Issue: 3
• Pages: 732-737

Dates

published

2009-03

received

2008-09-29

(unknown)

2008-11-24

Contributors

author

M. Isik

• Department of Electrical and Electronics Engineering, Atilim University, 06836 Ankara, Turkey

author

N. Gasanly

• Department of Physics, Middle East Technical University, 06531 Ankara, Turkey

author

H. Ozkan

• Department of Physics, Middle East Technical University, 06531 Ankara, Turkey

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Identifiers

DOI

10.12693/APhysPolA.115.732