Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl

PL EN


Preferences help
enabled [disable] Abstract
Number of results
2009 | 115 | 3 | 732-737

Article title

Deep Traps Distribution in TlInS_2 Layered Crystals

Content

Title variants

Languages of publication

EN

Abstracts

EN
The trap centers and distributions in TlInS_2 were studied in the temperature range of 100-300 K by using thermally stimulated currents technique. Experimental evidence was found for the presence of three trapping centers with activation energies 400, 570, and 650 meV. Their capture cross-sections were determined as 6.3 × 10^{-16}, 2.7× 10^{-12}, and 1.8× 10^{-11} cm^{2}, respectively. It was concluded that in these centers retrapping is negligible as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. An exponential distribution of hole traps was revealed from the analysis of the thermally stimulated current data obtained at different light excitation temperatures. This experimental technique provided a value of 800 meV/decade for the trap distribution.

Keywords

EN

Contributors

author
  • Department of Electrical and Electronics Engineering, Atilim University, 06836 Ankara, Turkey
author
  • Department of Physics, Middle East Technical University, 06531 Ankara, Turkey
author
  • Department of Physics, Middle East Technical University, 06531 Ankara, Turkey

References

  • 1. K.A. Yee, A. Albright, J. Am. Chem. Soc. 113, 6474 (1991) and references therein
  • 2. K.R. Allakhverdiev, Solid State Commun. 111, 253 (1999)
  • 3. T.D. Ibragimov, I.I. Aslanov, Solid State Commun. 123, 339 (2002)
  • 4. H. Hahn, B. Wellmann, Naturwissenschaften 54, 42 (1967)
  • 5. D. Muller, F.E. Poltmann, H. Hahn, Z. Naturforsch. B 29, 117 (1974)
  • 6. K.J. Range, G. Engert, W. Muller, A. Weiss, Z. Naturforsch. B 29, 181 (1974)
  • 7. N. Kalkan, D. Papadopoulos, A.N. Anagnostopoulos, J. Spyridelis, Mater. Res. Bull. 28, 693 (1993)
  • 8. M.P. Hanias, A.N. Anagnostopoulos, K. Kambas, J. Spyridelis, Physica B 160, 154 (1989)
  • 9. M.P. Hanias, A.N. Anagnostopoulos, K. Kambas, J. Spyridelis, Mater. Res. Bull. 27, 25 (1992)
  • 10. A.F. Qasrawi, N.M. Gasanly, Cryst. Res. Technol. 39, 439 (2004)
  • 11. J.A. Kalomiros, A.N. Anagnostopoulos, Phys. Rev. B 50, 7488 (1994)
  • 12. K.R. Allakhverdiev, T.G. Mammadov, R.A. Suleymanov, N.Z. Gasanov, J. Phys., Condens. Matter 5, 1291 (2003)
  • 13. T.D. Ibragimov, I.I. Aslanov, Solid State Commun. 123, 339 (2002)
  • 14. Nevin Kalkan, M.P. Hanias, A.N. Anagnostopoulos, Mater. Res. Bull. 27, 1329 (1992)
  • 15. G.D. Guseinov, E. Mooser, E.M. Kerimova, R.S. Gamidov, I.V. Alekseev, M.Z. Ismailov, Phys. Status Solidi 34, 33 (1969)
  • 16. M.Ya. Bakirov, N.M. Zeinalov, S.G. Abdullayeva, V.A. Gajiyev, E.M. Gojayev, Solid State Commun. 44, 205 (1982)
  • 17. A. Aydinli, N.M. Gasanly, I. Yilmaz, A. Serpenguzel, Semicond. Sci. Technol. 14, 599 (1999)
  • 18. V.M. Skorikov, V.I. Chmyrev, V.V. Zuev, E.V. Larina, Inorg. Mater. 38, 751 (2002)
  • 19. Y. Kamitani, S. Maeta, Jpn. J. Appl. Phys. 39, 115 (2000)
  • 20. E. Borchi, M. Bruzzi, S. Pirollo, S. Sciortino, J. Phys. D, Appl. Phys. 3, L93 (1998)
  • 21. R. Chen, Y. Kirsh, Analysis of Thermally Stimulated Processes, Pergamon Press, Oxford 1981
  • 22. R. Bube, Photoelectronic Properties of Semiconductors, Cambridge University Press, Cambridge 1992
  • 23. N.S. Yuksek, N.M. Gasanly, H. Ozkan, O. Karci, Acta Phys. Pol. A 106, 95 (2004)
  • 24. S. Özdemir, R.A. Suleymanov, E. Civan, T. Firat, Solid State Commun. 98, 385 (1996)
  • 25. M. Isik, K. Goksen, N.M. Gasanly, H. Ozkan, J. Korean Phys. Soc. 52, 367 (2008)
  • 26. N.S. Yuksek, N.M. Gasanly, H. Ozkan, Semicond. Sci. Technol. 18, 834 (2003)
  • 27. A. Serpi, J. Phys. D, Appl. Phys. 9, 1881 (1976)
  • 28. A. Bosacchi, B. Bosacchi, S. Franchia, L. Hernandez, Solid State Commun. 13, 1805 (1973)
  • 29. A. Anedda, M.B. Casu, A. Serpi, I.I. Burlakov, I.M. Tiginyanu, V.V. Ursaki, J. Phys. Chem. Solids 58, 325 (1997)
  • 30. P.C. Ricci, A. Anedda, R. Corpino, I.M. Tiginyanu, V.V. Ursaki, J. Phys. Chem. Solids 64, 1941 (2003)
  • 31. T. Pisarkiewicz, Opto-Electron. Rev. 12, 33 (2004)

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv115n324kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.