Properties of Indium Tin Oxide Thin Films Deposited on Polymer Substrates

• Authors: S. Mohamed , F. El-Hossary , G. Gamal , M. Kahlid
• Languages of publication: EN

Abstracts

EN

Indium tin oxide thin films with different thicknesses were deposited on polymer substrates, held at room temperature, using electron beam evaporation. The dependence of structural properties, optical properties and room temperature resistivity on the indium tin oxide film thickness was studied. X-ray diffraction illustrates the amorphous structure for all the indium tin oxide prepared films. The high roughness of the polymer substrate affects the properties of indium tin oxide films. The transmittance, the resistivity, and the optical band gap decrease with increasing the film thickness while the refractive index increases. The present indium tin oxide films are amorphous, transparent and have relatively low resistivity. These properties are suitable as transparent electrode for organic light-emitting diodes, touch screens, and in piezoelectric applications.

Keywords

EN

61.05.cp; 07.79.Lh; 78.66.-w; 73.61.-r

Discipline

• 73.61.-r: Electrical properties of specific thin films(for optical properties of thin films, see 78.20.-e and 78.66.-w; for magnetic properties of thin films, see 75.70.-i)
• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
• 61.05.cp: X-ray diffraction
• 07.79.Lh: Atomic force microscopes

• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 115
• Issue: 3
• Pages: 704-708

Dates

published

2009-03

received

2008-09-05

(unknown)

2008-10-21

Contributors

author

S. Mohamed

• Physics Department, Faculty of Science, Sohag University, 82524 Sohag, Egypt

author

F. El-Hossary

• Physics Department, Faculty of Science, Sohag University, 82524 Sohag, Egypt

author

G. Gamal

• Physics Department, Faculty of Science, South Valley University, 83523 Qena, Egypt

author

M. Kahlid

• Physics Department, Faculty of Science, South Valley University, 83523 Qena, Egypt

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Identifiers

DOI

10.12693/APhysPolA.115.704