Electrochemically-Gated Field-Effect Transistor with Indium Tin Oxide Nanoparticles as Active Layer

• Authors: S. Dasgupta , S. Dehm , R. Kruk , H. Hahn
• Languages of publication: EN

Abstracts

EN

An electrochemically-gated junction field-effect transistor with metallic conducting indium tin oxide nanoparticle array as active layer is reported. Fabrication of a field-effect device with a degenerative semiconductor like indium tin oxide (carrier concentration 10^{20}-10^{21} cm^{-3}) is possible by exploiting the high surface-to-volume ratio of nanoparticles and high surface charge density achievable by electrochemical gating. The on/off ratio obtained is 325 although the applied potential was restricted to the capacitive double layer region (to ensure high repeatability) without allowing redox reactions to take place at the interface.

Keywords

EN

72.15.Eb; 73.63.Bd; 81.07.Bc; 82.45.Vp; 85.30.Tv

Discipline

• 82.45.Vp: Semiconductor materials in electrochemistry(see also 81.05.Cy Elemental semiconductors; 81.05.Dz II-VI semiconductors; 81.05.Ea III-V semiconductors; 81.05.Fb Organic semiconductors; 81.05.Gc Amorphous semiconductors in specific materials)
• 73.63.Bd: Nanocrystalline materials
• 85.30.Tv: Field effect devices
• 81.07.Bc: Nanocrystalline materials
• 72.15.Eb: Electrical and thermal conduction in crystalline metals and alloys

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 115
• Issue: 2
• Pages: 473-476

Dates

published

2009-02

Contributors

author

S. Dasgupta

• Institute of Nanotechnology, Forschungszentrum Karlsruhe GmbH, P.O. Box 3640, D-76021 Karlsruhe, Germany
• Center for Functional Nanostructures, Universität Karlsruhe, 76131 Karlsruhe, Germany

author

S. Dehm

• Institute of Nanotechnology, Forschungszentrum Karlsruhe GmbH, P.O. Box 3640, D-76021 Karlsruhe, Germany

author

R. Kruk

• Institute of Nanotechnology, Forschungszentrum Karlsruhe GmbH, P.O. Box 3640, D-76021 Karlsruhe, Germany

author

H. Hahn

• Institute of Nanotechnology, Forschungszentrum Karlsruhe GmbH, P.O. Box 3640, D-76021 Karlsruhe, Germany
• Center for Functional Nanostructures, Universität Karlsruhe, 76131 Karlsruhe, Germany

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Identifiers

DOI

10.12693/APhysPolA.115.473