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2008 | 114 | 5 | 1257-1264
Article title

Characterization of Non-Polar ZnO Layers with Positron Annihilation Spectroscopy

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EN
Abstracts
EN
We applied positron annihilation spectroscopy to study the effect of growth polarity on the vacancy defects in ZnO grown by metal-organic vapor phase deposition on sapphire. Both c-plane and a-plane ZnO layers were measured, and Zn vacancies were identified as the dominant defects detected by positrons. The results are qualitatively similar to those of earlier experiments in GaN. The Zn vacancy concentration decreases in c-plane ZnO by almost one order of magnitude (from high 10^{17} cm^{-3} to low 10^{17} cm^{-3}) when the layer thickness is increased from 0.5 to 2 μm. Interestingly, in a-plane ZnO the Zn vacancy concentration is constant at a level of about 2×10^{17} cm^{-3} in all the samples with thicknesses varying from 0.6 to 2.4 μm. The anisotropy of the Doppler broadening of the annihilation radiation parallel and perpendicular to the hexagonal c-axis was also measured.
Keywords
Year
Volume
114
Issue
5
Pages
1257-1264
Physical description
Dates
published
2008-11
received
2008-06-07
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv114n570kz
Identifiers
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