Influence of Ion Implantation on Magnetic Structural and Optical Properties of (Ga,Mn)As Epitaxial Films

• Authors: O. Yastrubchak , M. Kulik , J. Żuk , J. Domagała , R. Szymczak , T. Wosiński , J. Sadowski , A. Tóth
• Languages of publication: EN

Abstracts

EN

We performed implantation experiments, applying both the chemically active oxygen ions and inactive ions of neon noble gas, to thin epitaxial films of (Ga,Mn)As ferromagnetic semiconductor. Inspection of their magnetic properties by means of a superconducting quantum interference device magnetometer revealed that the implantation with a low dose of either O or Ne ions completely suppressed ferromagnetism in the films. Both the high resolution X-ray diffraction technique and the Raman spectroscopy showed significant changes in the structural and optical properties of the films caused by oxygen implantation and confirmed the preservation of high structural and optical quality of the neon implanted (Ga,Mn)As films.

Keywords

EN

75.50.Pp; 78.30.Fs

Discipline

• 75.50.Pp: Magnetic semiconductors
• 78.30.Fs: III-V and II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 5
• Pages: 1445-1450

Dates

published

2008-11

received

2008-06-07

Contributors

author

O. Yastrubchak

• Institute of Physics, UMCS, pl. Marii Curie-Skłodowskiej 5, 20-031 Lublin, Poland

author

M. Kulik

• Institute of Physics, UMCS, pl. Marii Curie-Skłodowskiej 5, 20-031 Lublin, Poland

author

J. Żuk

• Institute of Physics, UMCS, pl. Marii Curie-Skłodowskiej 5, 20-031 Lublin, Poland

author

J. Domagała

• Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland

author

R. Szymczak

• Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland

author

T. Wosiński

• Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland

author

J. Sadowski

• Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland
• MAX-Lab, Lund University, 22100 Lund, Sweden

author

A. Tóth

• Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, 1525 Budapest, Hungary

References

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Identifiers

DOI

10.12693/APhysPolA.114.1445