Application of Non-Classical Distribution Function to Transport Properties of Semiconductor Nanodevices

• Authors: P. Wójcik , B. Spisak , M. Wołoszyn , J. Adamowski
• Languages of publication: EN

Abstracts

EN

The non-classical distribution function formalism is used for studying the electron transport in a nanosystem. We calculated the current-voltage characteristics of a triple barrier one-dimensional nanostructure which is connected to three-dimensional (highly doped semiconductor) reservoirs by the ohmic contacts. We also estimated the peak-to-valley ratio for the considered nanostructure and discussed the effect of switching the bias from peak-to-valley and from valley-to-peak voltages.

Keywords

EN

73.63.-b; 73.21.Ac; 72.80.Ey

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 73.63.-b: Electronic transport in nanoscale materials and structures(see also 73.23.-b Electronic transport in mesoscopic systems)
• 73.21.Ac: Multilayers

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 5
• Pages: 1431-1436

Dates

published

2008-11

received

2008-06-07

Contributors

author

P. Wójcik

• Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Kraków, Poland

author

B. Spisak

• Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Kraków, Poland

author

M. Wołoszyn

• Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Kraków, Poland

author

J. Adamowski

• Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Kraków, Poland

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Identifiers

DOI

10.12693/APhysPolA.114.1431