Non-Exponential Photoionization of the DX Centers in Gallium Doped CdTe and Cd_{0.99}Mn_{0.01}Te

• Authors: J. Trzmiel , E. Płaczek-Popko , K. Weron , J. Szatkowski , E. Wojtyna
• Languages of publication: EN

Abstracts

EN

The low temperature non-exponential transients of photoconductivity build-up in gallium doped Cd_{0.99}Mn_{0.01}Te and CdTe alloys possessing DX centers were studied. It was found that the two-exponential model commonly used to explain the persistent photoconductivity growth in semiconductors with DX centers describes properly solely the photokinetics obtained for CdTe:Ga. In the case of Cd_{0.99}Mn_{0.01}Te:Ga the stretched-exponential approach is more appropriate, for it explains the short-time power-law exhibited by the experimental data.

Keywords

EN

71.55.Gs; 61.72.jj; 78.20.Bh

Discipline

• 61.72.jj: Interstitials
• 71.55.Gs: II-VI semiconductors
• 78.20.Bh: Theory, models, and numerical simulation

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 5
• Pages: 1417-1420

Dates

published

2008-11

received

2008-06-07

Contributors

author

J. Trzmiel

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

E. Płaczek-Popko

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

K. Weron

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

J. Szatkowski

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

E. Wojtyna

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

References

• 1. C.H. Park, D.J. Chadi, Phys. Rev. B 52, 11884 (1995)
• 2. S. Ghosh, V. Kumar, Phys. Rev. B 46, 7533 (1992)
• 3. L. Dobaczewski, P. Kaczor, Phys. Rev. B 44, 8621 (1991)
• 4. E. Płaczek-Popko, J. Szatkowski, P. Becla, J. Appl. Phys. 95, 1 (2004)
• 5. E. Płaczek-Popko, J. Szatkowski, J. Duda, A. Hajdusianek, P. Becla, Phys. Status Solidi A 201, 517 (2004)
• 6. J. Stankiewicz, V.M. Yartsev, Solid State Commun. 95, 75 (1995)
• 7. J.Z. Li, J.Y. Lin, H.X. Jiang, M. Asif Khan, Q. Chen, J. Appl. Phys. 82, 1227 (1997)
• 8. T.Y. Lin, F.C. Fan, Y.F. Chen, Semicond. Sci. Technol. 44, 406 (1999)
• 9. E. Płaczek-Popko, P. Becla, Physica B 308-310, 954 (2001)
• 10. E. Płaczek-Popko, J. Szatkowski, P. Becla, Physica B 340-342, 888 (2003)
• 11. J. Trzmiel, E. Płaczek-Popko, K. Weron, J. Appl. Phys. 103, 2008, in press
• 12. A. Jurlewicz, K. Weron, Cell. Mol. Biol. Lett. 4, 56 (1999)
• 13. A. Jurlewicz, K. Weron, J. Non-Cryst. Solids 305, 112 (2002)
• 14. A.K. Jonscher, A. Jurlewicz, K. Weron, Contemporary Phys. 44, 329 (2003)

Identifiers

DOI

10.12693/APhysPolA.114.1417