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2008 | 114 | 5 | 1417-1420
Article title

Non-Exponential Photoionization of the DX Centers in Gallium Doped CdTe and Cd_{0.99}Mn_{0.01}Te

Content
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Languages of publication
EN
Abstracts
EN
The low temperature non-exponential transients of photoconductivity build-up in gallium doped Cd_{0.99}Mn_{0.01}Te and CdTe alloys possessing DX centers were studied. It was found that the two-exponential model commonly used to explain the persistent photoconductivity growth in semiconductors with DX centers describes properly solely the photokinetics obtained for CdTe:Ga. In the case of Cd_{0.99}Mn_{0.01}Te:Ga the stretched-exponential approach is more appropriate, for it explains the short-time power-law exhibited by the experimental data.
Keywords
EN
Publisher

Year
Volume
114
Issue
5
Pages
1417-1420
Physical description
Dates
published
2008-11
received
2008-06-07
Contributors
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv114n563kz
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