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2008 | 114 | 5 | 1343-1348
Article title

Terahertz Detection by the Entire Channel of High Electron Mobility Transistors

Content
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Languages of publication
EN
Abstracts
EN
GaAs/AlGaAs and GaN/AlGaN high electron mobility transistors were used as detectors of THz electromagnetic radiation at liquid helium temperatures. Application of high magnetic fields led to the Shubnikov-de Haas oscillations of the detection signal. Measurements carried out with a simultaneous modulation of the intensity of the incident THz beam and the transistor gate voltage showed that the detection signal is determined by the electron plasma both in the gated and ungated parts of the transistor channel. This result is of importance for understanding the physical mechanism of the detection in high electron mobility transistors and for development of a proper theoretical description of this process.
Keywords
Year
Volume
114
Issue
5
Pages
1343-1348
Physical description
Dates
published
2008-11
received
2008-06-07
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv114n551kz
Identifiers
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