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2008 | 114 | 5 | 1337-1342
Article title

Mechanism of Radiation Coupling to Plasma Wave Field Effect Transistor Sub-THz Detectors

Content
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EN
Abstracts
EN
Detection of 100 GHz and 285 GHz electromagnetic radiation by GaAs/AlGaAs field effect transistors with the gate length of 150 nm was investigated at 300 K as a function of the angleαbetween the direction of linear polarization of the radiation and the symmetry axis of the field effect transistors. The angular dependence of the detected signal was found to be Acos²(α-α₀)+C. A response of the transistor chip (including bonding wires and the substrate) to the radiation was numerically simulated. Calculations confirmed experimentally observed dependences and allowed to investigate the role of bonding wires and contact pads in coupling of the radiation to the transistor channel.
Keywords
Year
Volume
114
Issue
5
Pages
1337-1342
Physical description
Dates
published
2008-11
received
2008-06-07
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv114n550kz
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