Analysis of Chemical Disorder in Pb_{1-x}Ge_{x}Te

• Authors: T. Radzyński , A. Łusakowski
• Languages of publication: EN

Abstracts

EN

The PbGeTe crystal lattice is locally deformed due to different ionic radii of cations and their random placement in the lattice. It is important to quantitatively characterize such microscopic disorder because local deformations have significant influence on the properties of magnetic ions introduced to such crystal. The simples method to study microscopic disorder is to consider purely classical model of the lattice in which neighboring atoms are connected by springs with properly chosen spring constant and equilibrium lengths. In the present work, using ab initio methods we discuss applicability of the springs-atoms model to the real crystal. We also explain results of extended X-ray absorption fine structure experiments performed on PbGeTe mixed crystals.

Keywords

EN

31.15.A-; 61.43.-j; 61.43.Bn

Discipline

• 61.43.-j: Disordered solids(see also 81.05.Gc Amorphous semiconductors, 81.05.Kf Glasses, and 81.05.Rm Porous materials; granular materials in materials science; for photoluminescence of disordered solids, see 78.55.Mb and 78.55.Qr)
• 61.43.Bn: Structural modeling: serial-addition models, computer simulation
• 31.15.A-: Ab initiocalculations

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 5
• Pages: 1317-1322

Dates

published

2008-11

received

2008-06-07

Contributors

author

T. Radzyński

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Łusakowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

References

• 1. M. Górska, A. Łusakowski, A. Jędrzejczak, Z. Gołacki, R.R. Gałązka, J.R. Anderson, H. Balci, Phys. Rev. B 73, 125201 (2006)
• 2. T. Radzyński, A. Łusakowski, K. Świątek, T. Story, poster presented on XXXVI International School on the Physics of Semiconducting Compounds, Jaszowiec 2007
• 3. B. Ravel, E. Cockayne, M. Newville, K.M. Rabe, Phys. Rev. B 60, 14632 (1999)
• 4. See http://www.openmx-square.org/
• 5. See http://www.quantum-espresso.org/
• 6. R. Dornhaus, G. Nimtz, B. Schlicht, Narrow-Gap Semiconductors, Springer -Verlag, Berlin 1985
• 7. F. Birch, Phys. Rev. 71, 809 (1947)

Identifiers

DOI

10.12693/APhysPolA.114.1317