Study of the Defect Structure of Hg_{1-x}Cd_{x}Te Films by Ion Milling

• Authors: M. Pociask , I. Izhnin , E. Ilyina , S. Dvoretsky , N. Mikhailov , Yu. Sidorov , V. Varavin , K. Mynbaev
• Languages of publication: EN

Abstracts

EN

A study of the defect structure of heteroepitaxially grown Hg_{1-x}Cd_{x}Te (MCT) films was performed with the use of ion milling. Undoped and in situ As- (acceptor) or In- (donor) doped films with x=0.22, grown by molecular beam epitaxy on GaAs substrates, as-grown and annealed, were subjected to ion milling with subsequent electrical characterization. The results obtained on the MBE films were compared to those acquired on wafers cut from bulk crystals, and on epitaxial films grown by liquid and vapor phase epitaxy. In all the MBE films ion milling revealed a presence of a neutral defect with concentration ≈ 10^{17} cm^{-3}, formed at the stage of the growth. Residual donor concentration in the films was found to be of the order of 10^{15} cm^{-3}, which is typical of high-quality MCT.

Keywords

EN

73.61.Ga; 61.80.Jh; 66.30.Lw

Discipline

• 73.61.Ga: II-VI semiconductors
• 66.30.Lw: Diffusion of other defects
• 61.80.Jh: Ion radiation effects(for ion implantation, see 61.72.U-)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 5
• Pages: 1293-1301

Dates

published

2008-11

received

2008-06-07

Contributors

author

M. Pociask

• Institute of Physics, University of Rzeszów, Rejtana 16A, 35-310 Rzeszów, Poland

author

I. Izhnin

• R&D Institute for Materials SRC "Carat", Lviv, 79031, Ukraine

author

E. Ilyina

• R&D Institute for Materials SRC "Carat", Lviv, 79031, Ukraine

author

S. Dvoretsky

• A.V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk, 623900, Russia

author

N. Mikhailov

• A.V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk, 623900, Russia

author

Yu. Sidorov

• A.V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk, 623900, Russia

author

V. Varavin

• A.V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk, 623900, Russia

author

K. Mynbaev

• A.F. Ioffe Physico-Technical Institute of RAS, St.-Petersburg, 194021, Russia

References

• 1. K.D. Mynbaev, V.I. Ivanov-Omskii, Semiconductors 37, 1127 (2003)
• 2. V.V. Bogoboyashchii, I.I. Izhnin, Russian Phys. J. 43, 627 (2000)
• 3. D. Shaw, P. Capper, J. Mater. Sci.: Mater. Electron. 11, 169 (2000)
• 4. V.I. Ivanov-Omskii, K.E. Mironov, K.D. Mynbaev, Semicond. Sci. Technol. 8, 634 (1993)
• 5. V.V. Bogoboyashchyy, S.A. Dvoretsky, I.I. Izhnin, N.N. Mikhailov, Yu.G. Sidorov, F.F. Sizov, V.S. Varavin, V.A. Yudenkov, Phys. Status. Solidi C 1, 355 (2004)
• 6. I.I. Izhnin, V.V. Bogoboyashchyy, F.F. Sizov, Proc. SPIE 5881, 222 (2005)
• 7. R. Haakenaasen, H. Steen, E. Selvig, T. Lorentzen, A.D. Van Rheenen, L. Trosdahl-Iversen, H. Syversen, D. Hall, N. Gordon, T. Skauli, A.H. Vaskinn, Phys. Scr. 126, 31 (2006)
• 8. V.S. Varavin, V.V. Vasiliev, S.A. Dvoretsky, N.N. Mikhailov, V.N. Ovsyuk, Yu.G. Sidorov, A.O. Suslyakov, M.V. Yakushev, A.L. Aseev, Opto-Electron. Rev. 11, 99 (2003)
• 9. F. Aqariden, P.D. Dreiske, M.A. Kinch, P.K. Liao, T. Murphy, H.F. Schaake, T.A. Shafer, H.D. Shin, T.H. Teherani, J. Electron. Mater. 36, 900 (2007)
• 10. V.V. Bogoboyashchyy, A.I. Elizarov, I.I. Izhnin, Semicond. Sci. Technol. 20, 726 (2005)
• 11. V.V. Bogoboyashchyy, I.I. Izhnin, K.D. Mynbaev, M. Pociask, A.P. Vlasov, Semicond. Sci. Technol. 21, 1144 (2006)
• 12. I.I. Izhnin, V.V. Bogoboyashchyy, M. Pociask, K.D. Mynbaev, V.I. Ivanov-Omskii, Semiconductors 41, 804 (2007)
• 13. V.V. Bogoboyashchyy, Semiconductors 36, 1332 (2002)
• 14. V.V. Bogoboyashchyy, K.R. Kurbanov, A.P. Oksanich, Funct. Mater. 7, 546 (2000)
• 15. V.V. Bogoboyashchyy, I.I. Izhnin, K.R. Kurbanov, UA Patent No. 54476 (2003)
• 16. I.I. Izhnin, S.A. Dvoretsky, N.N. Mikhailov, Yu.G. Sidorov, V.S. Varavin, K.D. Mynbaev, M. Pociask, Appl. Phys. Lett. 91, 132106 (2007)
• 17. M.L. Young, J. Giess, J. Appl. Phys. 69, 7173 (1991)
• 18. M. Yoshikawa, S. Ueda, K. Maruyama, H. Takigawa, J. Vac. Sci. Technol. A 3, 153 (1985)
• 19. E. Belas, R. Grill, J. Franc, P. Moravec, R. Varghová, P. Höschl, H. Sitter, J. Cryst. Growth, 224 52 (2001)

Identifiers

DOI

10.12693/APhysPolA.114.1293