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2008 | 114 | 5 | 1293-1301
Article title

Study of the Defect Structure of Hg_{1-x}Cd_{x}Te Films by Ion Milling

Content
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EN
Abstracts
EN
A study of the defect structure of heteroepitaxially grown Hg_{1-x}Cd_{x}Te (MCT) films was performed with the use of ion milling. Undoped and in situ As- (acceptor) or In- (donor) doped films with x=0.22, grown by molecular beam epitaxy on GaAs substrates, as-grown and annealed, were subjected to ion milling with subsequent electrical characterization. The results obtained on the MBE films were compared to those acquired on wafers cut from bulk crystals, and on epitaxial films grown by liquid and vapor phase epitaxy. In all the MBE films ion milling revealed a presence of a neutral defect with concentration ≈ 10^{17} cm^{-3}, formed at the stage of the growth. Residual donor concentration in the films was found to be of the order of 10^{15} cm^{-3}, which is typical of high-quality MCT.
Keywords
EN
Publisher

Year
Volume
114
Issue
5
Pages
1293-1301
Physical description
Dates
published
2008-11
received
2008-06-07
Contributors
author
  • Institute of Physics, University of Rzeszów, Rejtana 16A, 35-310 Rzeszów, Poland
author
  • R&D Institute for Materials SRC "Carat", Lviv, 79031, Ukraine
author
  • R&D Institute for Materials SRC "Carat", Lviv, 79031, Ukraine
author
  • A.V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk, 623900, Russia
author
  • A.V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk, 623900, Russia
author
  • A.V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk, 623900, Russia
author
  • A.V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk, 623900, Russia
author
  • A.F. Ioffe Physico-Technical Institute of RAS, St.-Petersburg, 194021, Russia
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv114n544kz
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