Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy

• Authors: A. Mizerov , V. Jmerik , V. Kaibyshev , T. Komissarova , S. Masalov , A. Sitnikova , S. Ivanov
• Languages of publication: EN

Abstracts

EN

The paper reports on plasma-assisted MBE growth of good quality N-face GaN layers directly on c-Al₂O₃ substrates. Growth kinetics under different growth conditions (substrate temperature, Ga to activated nitrogen flux ratio, etc.) during deposition of GaN(0001) and GaN(0001̅) both by the ammonia-based MBE or plasma-assisted MBE was studied. It was found that atomically smooth surface of 1 μm thick GaN(0001̅) films can be achieved by plasma-assisted MBE at the relatively high substrate temperature T_S ≈ 760°C and Ga to activated nitrogen flux ratio F_Ga/F_N* ≈ 1.8.

Keywords

EN

78.55.Cr; 81.05.Ea; 81.15.Hi

Discipline

• 78.55.Cr: III-V semiconductors
• 81.15.Hi: Molecular, atomic, ion, and chemical beam epitaxy
• 81.05.Ea: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 5
• Pages: 1253-1258

Dates

published

2008-11

received

2008-06-07

Contributors

author

A. Mizerov

• Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia

author

V. Jmerik

• Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia

author

V. Kaibyshev

• Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia

author

T. Komissarova

• Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia

author

S. Masalov

• Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia

author

A. Sitnikova

• Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia

author

S. Ivanov

• Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia

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Identifiers

DOI

10.12693/APhysPolA.114.1253