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2008 | 114 | 5 | 1253-1258
Article title

Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy

Content
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Languages of publication
EN
Abstracts
EN
The paper reports on plasma-assisted MBE growth of good quality N-face GaN layers directly on c-Al₂O₃ substrates. Growth kinetics under different growth conditions (substrate temperature, Ga to activated nitrogen flux ratio, etc.) during deposition of GaN(0001) and GaN(0001̅) both by the ammonia-based MBE or plasma-assisted MBE was studied. It was found that atomically smooth surface of 1 μm thick GaN(0001̅) films can be achieved by plasma-assisted MBE at the relatively high substrate temperature T_S ≈ 760°C and Ga to activated nitrogen flux ratio F_Ga/F_N* ≈ 1.8.
Keywords
EN
Year
Volume
114
Issue
5
Pages
1253-1258
Physical description
Dates
published
2008-11
received
2008-06-07
Contributors
author
  • Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia
author
  • Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia
author
  • Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia
  • Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia
author
  • Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia
author
  • Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia
author
  • Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv114n538kz
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