Influence of Electric Field and Carrier Localization on Carrier Dynamics in AlGaN Quantum Wells

• Authors: J. Mickevičius , G. Tamulaitis , E. Kuokštis , M. Shur , J. Yang , R. Gaska
• Languages of publication: EN

Abstracts

EN

Dynamics of nonequilibrium carriers in high-Al-content AlGaN/AlGaN multiple quantum wells was studied. A set of multiple quantum wells with well widths varying from 1.65 to 5.0 nm was grown by metal-organic chemical vapor deposition. The structures were investigated by photoluminescence spectroscopy under quasi-steady-state conditions. The observed blueshift of the photoluminescence band peak was attributed to the screening of the built-in electric field. The integrated photoluminescence intensity dependence on excitation and temperature showed a strong influence of carrier localization.

Keywords

EN

78.55.Cr; 78.67.De

Discipline

• 78.55.Cr: III-V semiconductors
• 78.67.De: Quantum wells

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 5
• Pages: 1247-1252

Dates

published

2008-11

received

2008-06-07

Contributors

author

J. Mickevičius

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9-III, LT-10222, Vilnius, Lithuania

author

G. Tamulaitis

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9-III, LT-10222, Vilnius, Lithuania

author

E. Kuokštis

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9-III, LT-10222, Vilnius, Lithuania

author

M. Shur

• Department of ECE and CIE, Rensselaer Polytechnic Institute, Troy, NY 12180, USA

author

J. Yang

• Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, USA

author

R. Gaska

• Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, USA

References

• 1. J. Deng, Y. Bilenko, A. Lunev, X. Hu, T.M. Katona, J. Zhang, M.S. Shur, R. Gaska, Jpn. J. Appl. Phys., Part 2 46, L263 (2007)
• 2. H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi, N. Kamata, Appl. Phys. Lett. 91, 071901 (2007)
• 3. H. Hirayama, N. Noguchi, T. Yatabe, N. Kamata, Appl. Phys. Expr. 1, 051101 (2008)
• 4. Y. Taniyasu, M. Kasu, T. Makimoto, Nature 441, 325 (2006)
• 5. J. Mickevičius, G. Tamulaitis, E. Kuokštis, K. Liu, M.S. Shur, J.P. Zhang, R. Gaska, Appl. Phys. Lett. 90, 131907 (2007)

Identifiers

DOI

10.12693/APhysPolA.114.1247