ZnCoO Films Obtained at Low Temperature by Atomic Layer Deposition Using Organic Zinc and Cobalt Precursors

• Authors: M. Łukasiewicz , A. Wójcik-Głodowska , E. Guziewicz , R. Jakieła , T. Krajewski , E. Łusakowska , W. Paszkowicz , R. Minikayev , M. Kiecana , M. Sawicki , M. Godlewski , Ł. Wachnicki , A. Szczepanik
• Languages of publication: EN

Abstracts

EN

In this paper we report on ZnCoO thin films grown by atomic layer deposition method in reactor F-120 Satellite. ZnCoO films were grown at low temperature (T_s=160°C) with a new zinc precursor (dimethylzinc - DMZn) and with cobalt (II) acetyloacetonate (Co(acac)₂) as a cobalt precursor and deionized water as an oxygen precursor. In this paper we concentrate on the methods of homogenizing Co distribution in ZnCoO films.

Keywords

EN

68.55.Ln; 68.55.Nq; 78.66.Hf; 81.15.Kk

Discipline

• 78.66.Hf: II-VI semiconductors
• 68.55.Nq: Composition and phase identification
• 68.55.Ln: Defects and impurities: doping, implantation, distribution, concentration, etc.(for diffusion of impurities, see 66.30.J-)
• 81.15.Kk: Vapor phase epitaxy; growth from vapor phase

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 5
• Pages: 1235-1240

Dates

published

2008-11

received

2008-06-07

Contributors

author

M. Łukasiewicz

• Dept. of Mathematics and Natural Sciences College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland

author

A. Wójcik-Głodowska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Guziewicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

R. Jakieła

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

T. Krajewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Łusakowska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Paszkowicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

R. Minikayev

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Kiecana

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Sawicki

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Godlewski

• Dept. of Mathematics and Natural Sciences College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland
• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

Ł. Wachnicki

• Dept. of Mathematics and Natural Sciences College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland
• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Szczepanik

• Dept. of Mathematics and Natural Sciences College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland
• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

References

• 1. T. Dietl, H. Ohno, F. Matsukura, Science 287, 1019 (2000)
• 2. K. Sato, H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39, L555 (2000)
• 3. K. Sato, H. Katayama-Yoshida, Jpn. J. Appl. Phys., Part 2 40, L334 (2001)
• 4. K. Ueda, H. Tabata, T. Kawai, Appl. Phys. Lett. 79, 988 (2001)
• 5. A. Wójcik, K. Kopalko, M. Godlewski, E. Guziewicz, R. Jakieła, R. Minikayev, W. Paszkowicz, Appl. Phys. Lett. 89, 051907 (2006)
• 6. A. Wójcik, M. Godlewski, E. Guziewicz, K. Kopalko, R. Jakieła, M. Kiecana, M. Sawicki, M. Guziewicz, M. Putkonen, L. Niinistö, Y. Dumont, N. Kelner, Appl. Phys. Lett. 90, 082502 (2007)

Identifiers

DOI

10.12693/APhysPolA.114.1235