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2008 | 114 | 5 | 1201-1206

Article title

Hole-Related Electrical Activity of InAs/GaAs Quantum Dots

Content

Title variants

Languages of publication

EN

Abstracts

EN
We present the hole-related electrical activity of the InAs quantum dots embedded in the n-type GaAs. We performed our experiments with the use of the Laplace and conventional deep level transient spectroscopies combined with the above GaAs band-gap illumination. We observed that depending on temperature and electric field the hole emission process is an interplay between the pure thermal emission and tunnelling processes. The tunnelling was quantitatively described by a simple model of the potential barrier.

Keywords

EN

Year

Volume

114

Issue

5

Pages

1201-1206

Physical description

Dates

published
2008-11
received
2008-06-07

Contributors

author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Microelectronics and Nanostructure Group, School of Electrical, and Electronic Engineering, The University of Manchester, Manchester, UK
author
  • Microelectronics and Nanostructure Group, School of Electrical, and Electronic Engineering, The University of Manchester, Manchester, UK
author
  • Microelectronics and Nanostructure Group, School of Electrical, and Electronic Engineering, The University of Manchester, Manchester, UK
author
  • Microelectronics and Nanostructure Group, School of Electrical, and Electronic Engineering, The University of Manchester, Manchester, UK
author
  • Microelectronics and Nanostructure Group, School of Electrical, and Electronic Engineering, The University of Manchester, Manchester, UK

References

  • 1. I.N. Stranski, L. Von Krastanow, Abhandlungen der Mathematisch-Naturwissenschaftlichen Klasse, Akademie der Wissenschaften und der Literatur in Mainz, Vol. 146, 1939, p. 797
  • 2. K.H. Schmidt, G. Medeiros-Ribeiro, M. Oestreich, P.M. Petroff, Phys. Rev. B 54, 11346 (1996)
  • 3. S.W. Lin, A.M. Song, N. Rigopolis, B. Hamilton, A.R. Peaker, M. Missous, J. Appl. Phys. 100, 043703 (2006)
  • 4. P.W. Fry, I.E. Itskevich, S.R. Parnell, J.J. Finley, L.R. Wilson, K.L. Schumacher, D.J. Mowbray, M.S. Skolnick, M. Al-Khafaji, A.G. Cullis, M. Hopkinson, J.C. Clark, G. Hill, Phys. Rev. B 62, 16784 (2000)
  • 5. P.N. Brounkov, A. Patane, A. Levin, L. Eaves, P.C. Main, Phys. Rev. B 65, 085326 (2002)
  • 6. W.-H. Chang, T.M. Hsu, C.C. Huang, S.L. Hsu, C.Y. Lai, N.T. Yeh, T.E. Nee, J.I. Chyi, Phys. Rev. B 62, 6959 (2000)
  • 7. P. Hawrylak, A. Wojs, Semicond. Sci. Technol. 11, 1516 (1996)
  • 8. R. Brunwin, B. Hamilton, P. Jordan, A.R. Peaker, Electron. Lett. 15, 349 (1979)
  • 9. S. Schulz, S. Schnull, Ch. Heyn, W. Hansen, Phys. Rev. B 69, 195317 (2004)
  • 10. K. Bonde Nielsen, E. Andersen, J. Appl. Phys. 79, 9385 (1996)
  • 11. O. Engstrom, M. Malmkvist, Y. Fu, H.O. Olafsson, E.O. Sveinbjornsson, Appl. Phys. Lett. 83, 3578 (2003)
  • 12. L. Dobaczewski, A.R. Peaker, K. Bonde Nielsen, J. Appl. Phys. 96, 4689 (2004)
  • 13. See: http://www.laplacedlts.eu
  • 14. M. Geller, E. Stock, C. Kapteyn, R.L. Sellin, D. Bimberg, Phys. Rev. B 73, 205331 (2006)

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv114n530kz
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