Determination of the Temperature Dependent Thermal Expansion Coefficients of Bulk AlN by HRXRD

• Authors: H. Kröncke , S. Figge , D. Hommel , B. Epelbaum
• Languages of publication: EN

Abstracts

EN

We measured the lattice constants of bulk aluminum nitride crystals at various temperatures by high resolution X-ray diffraction. By the use of a high temperature chamber and a X-ray cryostat a temperature regime from 20 to 1210 K was available. Furthermore, the measured data were fitted by Einstein- and Debye models which yield reliable parameters for the calculation of the thermal expansion coefficients of AlN.

Keywords

EN

01.30.Cc; 61.05.cp; 81.05.Ea; 65.40.De

Discipline

• 65.40.De: Thermal expansion; thermomechanical effects
• 61.05.cp: X-ray diffraction
• 01.30.Cc: Conference proceedings
• 81.05.Ea: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 5
• Pages: 1193-1200

Dates

published

2008-11

received

2008-06-07

Contributors

author

H. Kröncke

• Institute of Solid State Physics, Section Semiconductor Epitaxy, University of Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany

author

S. Figge

• Institute of Solid State Physics, Section Semiconductor Epitaxy, University of Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany

author

D. Hommel

• Institute of Solid State Physics, Section Semiconductor Epitaxy, University of Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany

author

B. Epelbaum

• Department of Materials Science 6, University of Erlangen-Nűrnberg, Martensstrasse 7, D-91058 Erlangen, Germany

References

• 1. M. Bickermann, B.M. Epelbaum, A. Winnacker, J. Cryst. Growth 269, 432 (2004)
• 2. P.F. Fewster, N.L. Andrew, J. Appl. Crystallogr. 28, 451 (1995)
• 3. R.R. Reeber, K. Wang, Mater. Chem. Phys. 46, 259 (1996)
• 4. Landolt-Börnstein, Group IV Elements, IV-VI and III-V Compounds, Vol. 41, Springer-Verlag, Berlin 2001, p. 370
• 5. G.A. Slack, S.F. Bartram, J. Appl. Phys. 46, 8998 (1975)
• 6. W.M. Yim, R.J. Paff, J. Appl. Phys. 45, 14561457 (1974)
• 7. K. Wang, R.R. Reeber, Mater. Res. Soc. Symp. Proc. 482, 863868 (1998)
• 8. W. Paszkowicz, M. Knapp, S. Podsiadlo, G. Kamler, J.B. Pelka, Acta Phys. Pol. A 101, 781 (2002)
• 9. S.N. Ivanov, P.A. Popov, B.I. Kornev, Phys. Solid State 39, 8183 (1997)
• 10. C. Roder, S. Einfeld, S. Figge, D. Hommel, Phys. Rev. B 72, 085218 (2005)

Identifiers

DOI

10.12693/APhysPolA.114.1193