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Number of results
2008 | 114 | 5 | 1179-1186
Article title

InGaN QW in External Electric Field Controlled by Pumping of 2D-Electron Gas

Content
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Languages of publication
EN
Abstracts
EN
We present investigations of GaInN/GaN/AlGaN structure containing cavity designed so that the electric field inside it can be changed by illumination. Numerical calculations show that illumination can change carrier distributions and consequently change the field and potential. The electric field influences properties of a quantum well placed in the cavity. We confirmed experimentally that the electric field controlled by external bias or by optical pumping, can change energy and occupation of electronic states in the quantum well. The quantum well energy could be changed of about 80 meV by voltage and 15 meV by illumination.
Keywords
EN
Publisher

Year
Volume
114
Issue
5
Pages
1179-1186
Physical description
Dates
published
2008-11
received
2008-06-07
Contributors
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv114n527kz
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