Magnetic Properties of Epitaxial (Ge,Mn)Te Thin Films with Varying Crystal Stoichiometry

• Authors: W. Knoff , V. Domukhovski , K. Dybko , P. Dziawa , M. Górska , R. Jakieła , E. Łusakowska , B. Taliashvili , T. Story , A. Reszka , J. Anderson , C. Rotundu
• Languages of publication: EN

Abstracts

EN

Magnetization of 1 μm thick ferromagnetic IV-VI (Ge, Mn)Te semiconductor layers with 10 at.% of Mn was studied by SQUID magnetometry method up to the magnetic fields of 70 kOe. The layers were grown on BaF₂ (111) substrates by molecular beam epitaxy with varying Te molecular flux, which permitted the control of layer stoichiometry and conducting hole concentration. X-ray diffraction and in situ electron diffraction characterization of layer growth and crystal structure revealed two-dimensional mode of growth and monocrystalline rhombohedral crystal structure of (Ge, Mn)Te layers. Controlling the layer stoichiometry influences the temperature dependence of magnetization with the ferromagnetic Curie temperature varying in Ge_{0.9}Mn_{0.1}Te layers from T_c=30 K (low Te flux) to T_c=42 K (high Te flux).

Keywords

EN

75.50.Pp

Discipline

• 75.50.Pp: Magnetic semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 5
• Pages: 1159-1165

Dates

published

2008-11

received

2008-06-07

Contributors

author

W. Knoff

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

V. Domukhovski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Dybko

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

P. Dziawa

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Górska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

R. Jakieła

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Łusakowska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

B. Taliashvili

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

T. Story

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Reszka

• Faculty of Mathematics and Natural Sciences, College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-185 Warsaw, Poland

author

J. Anderson

• Department of Physics and Center for Nanophysics and Advanced Materials, University of Maryland, College Park, MD 20742, USA

author

C. Rotundu

• Department of Physics and Center for Nanophysics and Advanced Materials, University of Maryland, College Park, MD 20742, USA

References

• 1. R.W. Cochrane, M. Plischke, J.O. Strom-Olsen, Phys. Rev. B 9, 3013 (1974)
• 2. T. Story, in: Lead Chalcogenides - Physics and Applications, Ed. D.R. Khokhlov, Taylor and Francis, New York 2003, p. 385
• 3. W.J.M. de Jonge, T. Story, H.J.M. Swagten, P.J.T. Eggenkamp, Europhys. Lett. 17, 631 (1992)
• 4. P.J.T. Eggenkamp, H.J.M. Swagten, T. Story, V.I. Litvinov, W.J.M. de Jonge, Phys. Rev. B 51, 15250 (1995)
• 5. Y. Fukuma, H. Asada, M. Arifuku, T. Koyanagi, Appl. Phys. Lett. 80, 1013 (2002)
• 6. W.Q. Chen, K.L. Teo, S.T. Lim, M.B.A. Jalil, T. Liew, T.C. Chong, Appl. Phys. Lett. 90, 142514 (2007)
• 7. Y. Fukuma, K. Goto, S. Senba, S. Miyawaki, H. Asada, T. Koyanagi, H. Sato, J. Appl. Phys. 103, 053904 (2008)
• 8. W. Knoff, P. Dziawa, V. Osinniy, B. Taliashvili, V. Domuchowski, E.Łusakowska, K. Swiatek, T. Story, Mater. Sci. - Poland 25, 295 (2007)

Identifiers

DOI

10.12693/APhysPolA.114.1159