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Abstracts
Multilayered ZnO films were deposited by rf magnetron sputtering on silicon and sapphire substrates. The aim of this work is to improve structural quality of ZnO thin films grown on just listed substrates. Presented X-ray diffraction data testify to remarkable relaxation of compressive stress in two- and three-layered ZnO films in comparison with single-layer one.
Discipline
Journal
Year
Volume
Issue
Pages
1131-1137
Physical description
Dates
published
2008-11
received
2008-06-07
Contributors
author
- Institute for Problems of Material Science, NASU, 3 Krzhizhanovskogo st., Kiev, 03680, Ukraine
author
- Institute for Problems of Material Science, NASU, 3 Krzhizhanovskogo st., Kiev, 03680, Ukraine
author
- Institute for Problems of Material Science, NASU, 3 Krzhizhanovskogo st., Kiev, 03680, Ukraine
author
- Institute for Problems of Material Science, NASU, 3 Krzhizhanovskogo st., Kiev, 03680, Ukraine
author
- Institute of Applied Physics, NASU, 58 Petropavlovskaya st., Sumy, 40030, Ukraine
author
- Institute of Applied Physics, NASU, 58 Petropavlovskaya st., Sumy, 40030, Ukraine
author
- Institute of Applied Physics, NASU, 58 Petropavlovskaya st., Sumy, 40030, Ukraine
author
- SSI 'Institute for Single Crystals', NASU, 60 Lenin Ave., Kharkov, 61001, Ukraine
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv114n520kz