Ultraviolet Detectors Based on ZnO:N Thin Films with Different Contact Structures

• Authors: A. Ievtushenko , G. Lashkarev , V. Lazorenko , V. Karpyna , V. Sichkovskyi , L. Kosyachenko , V. Sklyarchuk , O. Sklyarchuk , V. Bosy , F. Korzhinski , A. Ulyashin , V. Khranovskyy , R. Yakimova
• Languages of publication: EN

Abstracts

EN

Al/ZnO:N/Al and Ni/ZnO:N/Al diode photodetectors fabricated by dc magnetron sputtering of ZnO:N films on p-Si substrates are studied. The photocurrent-to-dark current ratio equal to 250 at λ= 390 nm and the time constant of photoresponse about 10 μs for Al/ZnO:N/Al structures with 4 μm interdigital spacing was achieved. The Ni/ZnO:N/Al diode structure has the rectification ratio ≈10² at bias 1 V, the maximal responsivity about 0.1 A/W is observed at 365 nm, and the measured time constant of photoresponse is about 100 ns.

Keywords

EN

81.05.Dz; 81.15.Cd; 85.60.Dw; 72.40.+w

Discipline

• 85.60.Dw: Photodiodes; phototransistors; photoresistors
• 81.05.Dz: II-VI semiconductors
• 81.15.Cd: Deposition by sputtering
• 72.40.+w: Photoconduction and photovoltaic effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 5
• Pages: 1123-1129

Dates

published

2008-11

received

2008-06-07

Contributors

author

A. Ievtushenko

• Institute for Problems of Material Science, NASU, Krzhyzhanovskyy str. 3, 03142, Kiev, Ukraine

author

G. Lashkarev

• Institute for Problems of Material Science, NASU, Krzhyzhanovskyy str. 3, 03142, Kiev, Ukraine

author

V. Lazorenko

• Institute for Problems of Material Science, NASU, Krzhyzhanovskyy str. 3, 03142, Kiev, Ukraine

author

V. Karpyna

• Institute for Problems of Material Science, NASU, Krzhyzhanovskyy str. 3, 03142, Kiev, Ukraine

author

V. Sichkovskyi

• Institute for Problems of Material Science, NASU, Krzhyzhanovskyy str. 3, 03142, Kiev, Ukraine

author

L. Kosyachenko

• Chernivtsi National University, Kotsyubinsky str. 2, 58012, Chernivtsi, Ukraine

author

V. Sklyarchuk

• Chernivtsi National University, Kotsyubinsky str. 2, 58012, Chernivtsi, Ukraine

author

O. Sklyarchuk

• Chernivtsi National University, Kotsyubinsky str. 2, 58012, Chernivtsi, Ukraine

author

V. Bosy

• JSCP SPU 'Saturn', 50-let Oktybrya av. 2b, 03148, Kiev, Ukraine

author

F. Korzhinski

• JSCP SPU 'Saturn', 50-let Oktybrya av. 2b, 03148, Kiev, Ukraine

author

A. Ulyashin

• SINTEF Materials and Chemistry, Forskningsveien 1, Blindern, NO-0314 Oslo, Norway

author

V. Khranovskyy

• Linkoping University, Department of Physics, Chemistry and Biology (IFM), 58183 Linköping, Sweden

author

R. Yakimova

• Linkoping University, Department of Physics, Chemistry and Biology (IFM), 58183 Linköping, Sweden

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Identifiers

DOI

10.12693/APhysPolA.114.1123