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2008 | 114 | 5 | 1115-1122
Article title

Effective Green Semiconductor Lasers with Multiple CdSe/ZnSe QD Active Region for Electron Beam Pumping

Content
Title variants
Languages of publication
EN
Abstracts
EN
The characteristics of ZnSe-based electron beam pumped semiconductor lasers are presented in detail. The laser structures consist of a 0.6 μm thick superlattice waveguide centered with ten equidistantly placed CdSe/ZnSe quantum dot active layers. The maximum light output pulse power of 12 W per facet at room temperature along with an extremely high quantum efficiency of ≈8.5% were obtained at an electron beam pumping energy of 23 keV (the laser wavelength is of 542 nm). The calculations of a spatial distribution of non-equilibrium carrier concentration within the semiconductor structures under electron beam pumping are presented. The possible ways of further improvement of laser efficiency are discussed.
Keywords
EN
Publisher

Year
Volume
114
Issue
5
Pages
1115-1122
Physical description
Dates
published
2008-11
received
2008-06-07
Contributors
author
  • Ioffe Physico-Technical Institute of RAS, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Physico-Technical Institute of RAS, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Physico-Technical Institute of RAS, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Physico-Technical Institute of RAS, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Physico-Technical Institute of RAS, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Moscow Institute for Radio Engineering, Electronics and Automation, Vernadskogo 78, Moscow 119454, Russia
author
  • Moscow Institute for Radio Engineering, Electronics and Automation, Vernadskogo 78, Moscow 119454, Russia
author
  • Moscow Institute for Radio Engineering, Electronics and Automation, Vernadskogo 78, Moscow 119454, Russia
author
  • Moscow Institute for Radio Engineering, Electronics and Automation, Vernadskogo 78, Moscow 119454, Russia
References
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  • 2. M.M. Zverev, N.A. Gamov, E.V. Zhdanova, D.V. Peregudov, V.B. Studenov, S.V. Ivanov, I.V. Sedova, S.V. Sorokin, S.V. Gronin, P.S. Kop'ev, Tech. Phys. Lett. 33, 1032 (2007)
  • 3. M.M. Zverev, S.V. Sorokin, I.V. Sedova, S.V. Ivanov, D.V. Peregudov, P.S. Kop'ev, Phys. Status Solidi C 2, 923 (2005)
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  • 6. M.M. Zverev, N.A. Gamov, E.V. Zhdanova, D.V. Peregudov, V.B. Studenov, I.V. Sedova, S.V. Gronin, S.V. Sorokin, S.V. Ivanov, P.S. Kop'ev, Semicond. Lett., in press
  • 7. V.I. Kozlovsky, Yu.G. Sadofyev, J. Vac. Sci. Technol. B 18, 1538 (2000)
  • 8. M.M. Zverev, D.V. Peregoudov, E.V. Zdanova, N.A. Gamov, V.B. Studionov, S.V. Ivanov, S.V. Sorokin, I.V. Sedova, P.S. Kop'ev, Le Si Dang, in: Proc. 14th Int. Symp. 'Nanostructures: Physics and Technology', Ioffe Physical-Technical Institute, St. Petersburg 2006, p. 27
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv114n518kz
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