Effective Green Semiconductor Lasers with Multiple CdSe/ZnSe QD Active Region for Electron Beam Pumping

• Authors: S. Gronin , S. Sorokin , I. Sedova , P. Kop'ev , S. Ivanov , M. Zverev , N. Gamov , D. Peregoudov , V. Studionov
• Languages of publication: EN

Abstracts

EN

The characteristics of ZnSe-based electron beam pumped semiconductor lasers are presented in detail. The laser structures consist of a 0.6 μm thick superlattice waveguide centered with ten equidistantly placed CdSe/ZnSe quantum dot active layers. The maximum light output pulse power of 12 W per facet at room temperature along with an extremely high quantum efficiency of ≈8.5% were obtained at an electron beam pumping energy of 23 keV (the laser wavelength is of 542 nm). The calculations of a spatial distribution of non-equilibrium carrier concentration within the semiconductor structures under electron beam pumping are presented. The possible ways of further improvement of laser efficiency are discussed.

Keywords

EN

78.55.Et; 78.67.Hc

Discipline

• 78.67.Hc: Quantum dots
• 78.55.Et: II-VI semiconductors

• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 5
• Pages: 1115-1122

Dates

published

2008-11

received

2008-06-07

Contributors

author

S. Gronin

• Ioffe Physico-Technical Institute of RAS, Polytekhnicheskaya 26, St. Petersburg 194021, Russia

author

S. Sorokin

• Ioffe Physico-Technical Institute of RAS, Polytekhnicheskaya 26, St. Petersburg 194021, Russia

author

I. Sedova

• Ioffe Physico-Technical Institute of RAS, Polytekhnicheskaya 26, St. Petersburg 194021, Russia

author

P. Kop'ev

• Ioffe Physico-Technical Institute of RAS, Polytekhnicheskaya 26, St. Petersburg 194021, Russia

author

S. Ivanov

• Ioffe Physico-Technical Institute of RAS, Polytekhnicheskaya 26, St. Petersburg 194021, Russia

author

M. Zverev

• Moscow Institute for Radio Engineering, Electronics and Automation, Vernadskogo 78, Moscow 119454, Russia

author

N. Gamov

• Moscow Institute for Radio Engineering, Electronics and Automation, Vernadskogo 78, Moscow 119454, Russia

author

D. Peregoudov

• Moscow Institute for Radio Engineering, Electronics and Automation, Vernadskogo 78, Moscow 119454, Russia

author

V. Studionov

• Moscow Institute for Radio Engineering, Electronics and Automation, Vernadskogo 78, Moscow 119454, Russia

References

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Identifiers

DOI

10.12693/APhysPolA.114.1115