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Article title
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Abstracts
The characteristics of ZnSe-based electron beam pumped semiconductor lasers are presented in detail. The laser structures consist of a 0.6 μm thick superlattice waveguide centered with ten equidistantly placed CdSe/ZnSe quantum dot active layers. The maximum light output pulse power of 12 W per facet at room temperature along with an extremely high quantum efficiency of ≈8.5% were obtained at an electron beam pumping energy of 23 keV (the laser wavelength is of 542 nm). The calculations of a spatial distribution of non-equilibrium carrier concentration within the semiconductor structures under electron beam pumping are presented. The possible ways of further improvement of laser efficiency are discussed.
Journal
Year
Volume
Issue
Pages
1115-1122
Physical description
Dates
published
2008-11
received
2008-06-07
Contributors
author
- Ioffe Physico-Technical Institute of RAS, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
author
- Ioffe Physico-Technical Institute of RAS, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
author
- Ioffe Physico-Technical Institute of RAS, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
author
- Ioffe Physico-Technical Institute of RAS, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
author
- Ioffe Physico-Technical Institute of RAS, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
author
- Moscow Institute for Radio Engineering, Electronics and Automation, Vernadskogo 78, Moscow 119454, Russia
author
- Moscow Institute for Radio Engineering, Electronics and Automation, Vernadskogo 78, Moscow 119454, Russia
author
- Moscow Institute for Radio Engineering, Electronics and Automation, Vernadskogo 78, Moscow 119454, Russia
author
- Moscow Institute for Radio Engineering, Electronics and Automation, Vernadskogo 78, Moscow 119454, Russia
References
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- 2. M.M. Zverev, N.A. Gamov, E.V. Zhdanova, D.V. Peregudov, V.B. Studenov, S.V. Ivanov, I.V. Sedova, S.V. Sorokin, S.V. Gronin, P.S. Kop'ev, Tech. Phys. Lett. 33, 1032 (2007)
- 3. M.M. Zverev, S.V. Sorokin, I.V. Sedova, S.V. Ivanov, D.V. Peregudov, P.S. Kop'ev, Phys. Status Solidi C 2, 923 (2005)
- 4. S.V. Ivanov, P.S. Kop'ev, A.A. Toropov, Usp. Fiz. Nauk 169, 468 (2099) (in Russian)
- 5. E.N. Donskoy, E.V. Zhdanova, A.N. Zalyalov, M.M. Znerev, S.V. Ivanov, D.V. Peregudov, O.N. Petrushin, Y.A. Savelev, I.V. Sedova, S.V. Sorokin, M.D. Tarasov, Y.N. Shigaev, J. Quantum Electron., in press
- 6. M.M. Zverev, N.A. Gamov, E.V. Zhdanova, D.V. Peregudov, V.B. Studenov, I.V. Sedova, S.V. Gronin, S.V. Sorokin, S.V. Ivanov, P.S. Kop'ev, Semicond. Lett., in press
- 7. V.I. Kozlovsky, Yu.G. Sadofyev, J. Vac. Sci. Technol. B 18, 1538 (2000)
- 8. M.M. Zverev, D.V. Peregoudov, E.V. Zdanova, N.A. Gamov, V.B. Studionov, S.V. Ivanov, S.V. Sorokin, I.V. Sedova, P.S. Kop'ev, Le Si Dang, in: Proc. 14th Int. Symp. 'Nanostructures: Physics and Technology', Ioffe Physical-Technical Institute, St. Petersburg 2006, p. 27
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv114n518kz