Zero Field Spin Splitting in GaN/AlGaN Heterostructures Probed by the Weak Antilocalization

• Authors: K. Dybko , M. Siekacz , C. Skierbiszewski
• Languages of publication: EN

Abstracts

EN

We present the magnetoconductivity measurements of a high mobility two-dimensional electron gas confined at GaN/AlGaN interface. The sensitive measurements of low field conductivity revealed both quantum corrections, the weak localization and antilocalization effects. It indicates the importance of the spin-orbit coupling in this wide band gap material. The analysis of the data provided the information about the temperature dependence of the dephasing time and total spin-orbit relaxation time. The conduction band spin splitting energy amounts to 0.23 meV and 0.35 meV at electron densities 2.2×10¹² cm¯² and 5.7×10¹² cm¯², respectively.

Keywords

EN

71.70.Ej; 73.43.Qt; 73.20.Fz

Discipline

• 73.43.Qt: Magnetoresistance(see also 75.47.-m Magnetotransport phenomena; materials for magnetotransport in magnetic properties and materials)
• 71.70.Ej: Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
• 73.20.Fz: Weak or Anderson localization

• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 5
• Pages: 1109-1113

Dates

published

2008-11

received

2008-06-07

Contributors

author

K. Dybko

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Siekacz

• High Pressure Research Center, PAS, Sokołowska 29/37, 01-142 Warsaw, Poland

author

C. Skierbiszewski

• High Pressure Research Center, PAS, Sokołowska 29/37, 01-142 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.114.1109