Optical Γ₆ → Γ₈ Free-to-Bound Transitions in Acceptor δ-Doped Single Heterostructure - Theoretical Analysis
Languages of publication
A theoretical analysis was carried out of an optical transition observed in high-quality GaAs/AlGaAs heterostructures δ-doped with shallow acceptors. The transition involves a 2D electron and a 3D acceptor-localized hole. The wave functions of a bulk Be acceptor were calculated within the spherical model with both the s-like and d-like parts of the envelope taken into account. The electron envelope wave functions resulted from self-consistent calculations of the electrostatic potential and were dependent on the 2D electron concentration, n_s. We show that: (i) including the d-like part of the acceptor envelope relaxes the selection rules of free-to-bound transitions at k=0;(ii) in the magnetic field, the selection rules depend on the number of the electron Landau level;(iii) the ratio of the intensity of the strongest transitions in both circular polarizations is essentially different from 3:1, and strongly depends on n_s. These results show that a description that neglects the d-like part of the acceptor envelope is both qualitatively and quantitatively unjustified.
- 1. I.V. Kukushkin, V.B. Timofeev, Adv. Phys. 45, 147 (1996)
- 2. I.V. Kukushkin, J.H. Smet, K. von Klitzing, K. Eberl, Phys. Rev. Lett. 85, 3688 (2000)
- 3. J.Łusakowski, R. Buczko, M. Sakowicz, K.-J. Friedland, R. Hey, K. Ploog, J. Phys., Condens. Matter 19, 236205 (2007)
- 4. A. Baldereschi, N.O. Lipari, Phys. Rev. B 8, 2697 (1973)
Publication order reference