Transmission Electron Microscopy and Luminescence Studies of Quantum Well Structures Resulting from Stacking Fault Formation in 4H-SiC Layers

• Authors: J. Borysiuk , A. Wysmołek , R. Bożek , W. Strupiński , J. Baranowski
• Languages of publication: EN

Abstracts

EN

Transmission electron microscopy and photoluminescence studies of quantum well structures related to stacking faults formation in 4H-SiC homoepitaxial layers are reported. The investigated 4H-SiC layers were deposited on 8° misoriented Si-terminated (0001) surface of high quality 4H-SiC substrate. It is found that the planar defects created by direct continuation from the SiC substrates are cubic 3C-SiC stacking faults. These defects are optically active, giving rise to characteristic luminescence band in the spectral range around 2.9 eV, which consist of several emission lines. The observed energy and intensity pattern of this emission is discussed of in terms of single, double and multiple quantum wells formed from neighboring 3C-SiC SF layers embedded in 4H-SiC material.

Keywords

EN

68.37.Lp; 78.55.-m; 61.72.Nn; 68.65.Fg; 61.72.up

Discipline

• 68.37.Lp: Transmission electron microscopy (TEM)
• 61.72.up: Other materials
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
• 68.65.Fg: Quantum wells
• 61.72.Nn: Stacking faults and other planar or extended defects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 5
• Pages: 1067-1072

Dates

published

2008-11

received

2008-06-07

Contributors

author

J. Borysiuk

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
• Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

A. Wysmołek

• Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

R. Bożek

• Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

W. Strupiński

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

J. Baranowski

• Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

References

• 1. M. Skowronski, S. Ha, J. Appl. Phys. 99, 011101 (2006)
• 2. D. Nakamura, I. Gunjishima, S. Yamaguchi, T. Ito, A. Okamoto, H. Kondo, S. Onda, K. Takatori, Nature (London) 430, 1009 (2004)
• 3. A. Galeckas, A. Hallen, S. Majdi, J. Linnros, Phys. Rev. B 74, 233203 (2006) and references therein
• 4. Y. Ding, K.-B. Park, J.P. Pelz, K.C. Palle, M.K. Mikhov, B.J. Skromme, H. Meidia, S. Mahajan, Phys. Rev B 69, 041305(R) (2004)
• 5. A.G. Srighara, F.H.C. Carlsson, J.P. Bergman, E. Janzén, Appl. Phys. Lett. 79, 3944 (2001)

Identifiers

DOI

10.12693/APhysPolA.114.1067