Ti-Al-N MAX Phase a Candidate for Ohmic Contacts to n-GaN

• Authors: M. Borysiewicz , E. Kamińska , A. Piotrowska , I. Pasternak , R. Jakieła , E. Dynowska
• Languages of publication: EN

Abstracts

EN

Fabrication of a Ti₂AlN MAX phase for contact applications to GaN-based devices is reported. Sample characterisation was done by means of X-ray diffraction and secondary ion mass spectroscopy. Successful Ti₂AlN monocrystalline growth was observed on GaN and Al₂O₃ substrates by annealing sputter-deposited Ti, Al and TiN layers in Ar flow at 600°C. The phase was not seen to grow when the layers were deposited on Si (111) or when the first layer on the substrate was TiN. N-type GaN samples with Ti₂AlN layers showed ohmic behaviour with contact resistivities in the range 10¯⁴ Ωcm².

Keywords

EN

61.05.cp; 68.49.Sf; 68.55.ag; 81.40.Ef

Discipline

• 81.40.Ef: Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
• 61.05.cp: X-ray diffraction
• 68.55.ag: Semiconductors
• 68.49.Sf: Ion scattering from surfaces (charge transfer, sputtering, SIMS)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 5
• Pages: 1061-1066

Dates

published

2008-11

received

2008-06-07

Contributors

author

M. Borysiewicz

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Kamińska

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Piotrowska

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

I. Pasternak

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

R. Jakieła

• Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Dynowska

• Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.114.1061