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2008 | 114 | 5 | 1055-1060
Article title

Neutral and Charged Excitons Localized in the InAs/GaAs Wetting Layer

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EN
Abstracts
EN
It has recently been shown that potential fluctuations in a wetting layer, which accompanies InAs/GaAs quantum dots can localize excitons. Neutral excitons and biexcitons and charged excitons were identified. In this communication we report on studies of properties of the excitons over wide temperature range (T < 70 K). The micro-photoluminescence measurements enable investigation of excitons localized in a single potential fluctuation. Temperature-induced broadening of the neutral exciton as well as a quenching of the charged exciton at temperatures higher than 50 K are observed and discussed.
Keywords
EN
Publisher

Year
Volume
114
Issue
5
Pages
1055-1060
Physical description
Dates
published
2008-11
received
2008-06-07
Contributors
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute for Microstructural Sciences, NRC, Ottawa, Ontario, K1A 0R6, Canada
author
  • Institute for Microstructural Sciences, NRC, Ottawa, Ontario, K1A 0R6, Canada
author
  • Institute for Microstructural Sciences, NRC, Ottawa, Ontario, K1A 0R6, Canada
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv114n509kz
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