EN
We report on results of magneto-transport measurements performed on four-arm nanostructure fabricated from p-type ferromagnetic Ga_{0.92}Mn_{0.08}As layer. The results reveal hysteresis-like behaviors of low field magnetoresistance. We interpret the magnetoresistance in terms of domain walls, which are expected to be trapped inside the nanostructure at some particular positions and which contribute to the total resistance.