GaMnAs: Layers, Wires and Dots

• Authors: J. Sadowski
• Languages of publication: EN

Abstracts

EN

Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAs(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation layers of amorphous arsenic. This post-growth treatment effectively increases the ferromagnetic-to-paramagnetic phase transition in GaMnAs, and provides surface-rich MnAs layer which can be used for formation of low-dimensional structures such as superlattices. If the surface rich MnAs layer consists of MnAs dots, then it is possible to grow Mn-doped GaAs nanowires.

Keywords

EN

75.50.Pp; 62.23.Hj; 81.16.Hc

Discipline

• 81.16.Hc: Catalytic methods
• 62.23.Hj: Nanowires
• 75.50.Pp: Magnetic semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 5
• Pages: 1001-1012

Dates

published

2008-11

received

2008-06-07

Contributors

author

J. Sadowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
• MAX-Lab, Lund University, 221 00 Lund, Sweden

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Identifiers

DOI

10.12693/APhysPolA.114.1001