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2008 | 114 | 5 | 1001-1012
Article title

GaMnAs: Layers, Wires and Dots

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Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAs(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation layers of amorphous arsenic. This post-growth treatment effectively increases the ferromagnetic-to-paramagnetic phase transition in GaMnAs, and provides surface-rich MnAs layer which can be used for formation of low-dimensional structures such as superlattices. If the surface rich MnAs layer consists of MnAs dots, then it is possible to grow Mn-doped GaAs nanowires.
Physical description
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
  • MAX-Lab, Lund University, 221 00 Lund, Sweden
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