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2008 | 114 | 5 | 1001-1012
Article title

GaMnAs: Layers, Wires and Dots

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Content
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EN
Abstracts
EN
Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAs(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation layers of amorphous arsenic. This post-growth treatment effectively increases the ferromagnetic-to-paramagnetic phase transition in GaMnAs, and provides surface-rich MnAs layer which can be used for formation of low-dimensional structures such as superlattices. If the surface rich MnAs layer consists of MnAs dots, then it is possible to grow Mn-doped GaAs nanowires.
Keywords
EN
Year
Volume
114
Issue
5
Pages
1001-1012
Physical description
Dates
published
2008-11
received
2008-06-07
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv114n505kz
Identifiers
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