Optoelectronic Devices Employing One-Dimensional Photonic Structures

• Authors: J. Muszalski
• Languages of publication: EN

Abstracts

EN

This paper reviews the experimental and theoretical results obtained during work on the modern semiconductor devices employing one-dimensional photonic structures. After short review of the physical features of structures consisting of 1D stack of the alternating high and low index layers, particular attention will be given to unique features of the devices employing microcavities: resonant cavity LEDs, resonant-cavity enhanced photo-detectors, vertical cavity surface emitting lasers, and also vertical external cavity surface emitting lasers. At the end the semiconductor saturable absorber mirrors are discussed.

Keywords

EN

73.21.Fg; 73.40.Kp; 78.20.Ek; 78.40.Fy; 78.47.Cd; 78.55.Cr; 78.60.Fi; 78.67.De

Discipline

• 78.55.Cr: III-V semiconductors
• 78.20.Ek: Optical activity
• 78.60.Fi: Electroluminescence
• 78.67.De: Quantum wells
• 73.21.Fg: Quantum wells
• 78.40.Fy: Semiconductors
• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 5
• Pages: 983-1000

Dates

published

2008-11

received

2008-06-07

Contributors

author

J. Muszalski

• Instytut Technologii Elektronowej, al. Lotników 32/46, 02-668 Warszawa, Poland

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Identifiers

DOI

10.12693/APhysPolA.114.983