PL EN


Preferences help
enabled [disable] Abstract
Number of results
2008 | 114 | 5 | 945-974
Article title

New Semiconductor Devices

Authors
Content
Title variants
Languages of publication
EN
Abstracts
EN
A review of recently emerging semiconductor devices for nanoelectronic applications is given. For the end of the international technology roadmap for semiconductors, very innovative materials, technologies and nanodevice architectures will be needed. Silicon on insulator-based devices seem to be the best candidates for the ultimate integration of integrated circuits on silicon. The flexibility of the silicon on insulator-based structure and the possibility to realize new device architectures allow to obtain optimum electrical properties for low power and high performance circuits. These transistors are also very interesting for high frequency and memory applications. The performance and physical mechanisms are addressed in single- and multi-gate thin film Si, SiGe and Ge metal-oxide-semiconductor field-effect-transistors. The impact of tensile or compressive uniaxial and biaxial strains in the channel, of high k materials and metal gates as well as metallic Schottky source-drain architectures are discussed. Finally, the interest of advanced beyond-CMOS (complementary MOS) nanodevices for long term applications, based on nanowires, carbon electronics or small slope switch structures are presented.
Keywords
Year
Volume
114
Issue
5
Pages
945-974
Physical description
Dates
published
2008-11
received
2008-06-07
References
  • 1. ITRS Roadmap: http://www.itrs.net/
  • 2. ENIAC Strategic Research Agenda: http://www.eniac.eu/web/SRA/local_index.php
  • 3. NANOSIL NoE web site: www.nanosil-noe.eu; SINANO NoE web site: www.sinano.org
  • 4. M. Myronov, Jap. J. Appl. Phys. 46, 721 (2007)
  • 5. G. Nicholas, IEEE Electron Dev. Lett. 28, 825 (2007)
  • 6. F. Driussi, D. Esseni, L. Selmi, M. Schmidt, M.C. Lemme, H. Kurz, D. Buca, S. Mantl, M.Luysberg, R. Loo, D. Nguyen, M. Reiche, in: Proc. ESSDERC 2007, p. 315
  • 7. J.J. Lee, J.S. Maa, D.J. Tweet, in: Proc. IEEE Int. SOI Conf., 2004, p. 139
  • 8. M. Sadaka, A.V.-Y. Thean, A. Barr, in: Proc. IEEE Int. SOI Conf., 2004, p. 209
  • 9. T. Numata, T. Irisawa, T. Tezuka, in: Proc. IEDM'04, p. 177
  • 10. J. Cai, K. Rim, A. Bryant, in: Proc. IEDM'04, p. 165
  • 11. I. Aberg, C.N. Chléirigh, O.O. Olubuyide, in: Proc. IEDM'04, p. 173
  • 12. K. Uchida, R. Zednik, C.H. Lu, in: Proc. IEDM'04, p. 229
  • 13. T. Low, in: Proc. IEDM'04, p. 151
  • 14. E. Landgraf, W. Rösner, M. Staedele, in: Proc. ULIS'2005, Bologna 2005, p. 15
  • 15. T. Guillaume, M. Mouis, S. Maîtrejean, in: Proc. IEEE Int. SOI Conf., 2004,, p. 42
  • 16. G. Larrieu, E. Dubois, R. Valentin, N. Breil, F. Danneville, G. Dambrine, J.C. Pesant, J.P. Raskin, in: Proc. IEDM'04, p. 147
  • 17. Z. Zhang, A. Qiu, R. Liu, M. Ostling, S.L. Zhang, Electron Dev. Lett. 28, 565 (2007)
  • 18. Q.T. Zhao, U. Breuer, E. Rije, S. Lenk, S. Mantl, Appl. Phys. Lett. 86, 062108 (2005)
  • 19. O. Engström, B. Raeissi, S. Hall, O. Buiu, M.C. Lemme, H.D.B. Gottlob, P.K. Hurley, K. Cherkaoui, Solid State Electron. 51, 622 (2007)
  • 20. P.K. Hurley, K. Cherkaoui, E. O'Connor, M.C. Lemme, H.D.B. Gottlob, M. Schmidt, S. Hall, Y. Lu, O. Buiu, B. Raeissi, J. Piscator, O. Engstrom, S.B. Newcomb, J. Electrochem. Soc. 155, G13 (2008)
  • 21. B. Raeissi, J. Piscator, O. Engström, S. Hall, O. Buiu, M.C. Lemme, H.D.B. Gottlob, P.K. Hurley, K. Cherkaoui, H.J. Osten, to be published in Solid State Electron. 52, (2008)
  • 22. F. Balestra, S. Cristoloveanu, M. Benachir, IEEE Electron Dev. Lett. EDL-8, 410 (1987)
  • 23. S. Eminente, D. Esseni, P. Palestri, in: Proc. IEDM'04, p. 609
  • 24. M. Bescond, K. Nehari, J.L. Autran, in: Proc. IEDM'04, p. 617
  • 25. J. Saint-Martin, A. Bournel, P. Dollfus, in: Proc. ULIS'2005, Bologna 2005, p. 61
  • 26. A. Khakifirooz, O.M. Nayfeh, D.A. Antoniadis, in: Proc. IEEE Int. SOI Conf., 2004, p. 79
  • 27. J. Widiez, F. Daugé, M. Vinet, in: Proc. IEEE Int. SOI Conf., 2004, p. 185
  • 28. A. Bansal, B.C. Paul, K. Roy, in: Proc. IEEE Int. SOI Conf., 2004, p. 94
  • 29. E.-J. Yoon, S.Y. Lee, S.M. Kim, in: Proc. IEDM'04, p. 627
  • 30. A. Marchi, E. Gnani, S. Reggiani, in: Proc. ULIS'2005, Bologna 2005, p. 99
  • 31. M. Bescond, in: Proc. IEDM'04
  • 32. J. Wang, in: Proc. IEDM'04
  • 33. K.E. Moselund, in: Proc. IEDM'2007, p. 191
  • 34. Z.-B. Zhang, J. Vac. Sci. Technol. B 24, (2006)
  • 35. M.C. Lemme, IEEE Electron. Dev. Lett. 28, 282 (2007)
  • 36. X. Tang, N. Reckinger, V. Bayot, C. Krzeminski, E. Dubois, A. Villaret, D.-C. Bensahel, IEEE Trans. Nanotechnol. 5, 649 (2006)
  • 37. F. Dhalluin, P.J. Desré, M.I. Den Hertog, J.L. Rouviére, P. Ferret, P. Gentile, T. Baron, J. Appl. Phys. 102, 094906 (2007)
  • 38. P. Gentile, T. David, F. Dhalluin, N. Pauc, M. Den Hertog, P. Ferret, T. Baron, Nanotechnology 19, 125608 (2008)
  • 39. T. Baron, M. Gordon, F. Dhalluin, C. Ternon, P. Ferret, P. Gentile, Appl. Phys. Lett. 89, 233111 (2006)
  • 40. T. Uchino, Appl. Phys. Lett. 86, 233110 (2005)
  • 41. K. Bhuwalka, Jap. J. Appl. Phys. 43, 4073 (2004)
  • 42. P.-F. Wang, Solid State Electron. 48, 2281 (2004)
  • 43. K. Boucart, A.M. Ionescu, IEEE Trans. Electron. Dev. 1725, (2007)
  • 44. K. Gopalakrishnan, in: Tech. Dig. IEDM'2002, p. 289
  • 45. K.E. Moselund, in: Proc. ESSDERC 2007, p. 287
  • 46. N. Abelé, in: Tech. Dig. IEDM'2005, Late News, p. 479
  • 47. N. Abelé, in: Tech. Dig. IEDM'2006, p. 509
  • 48. W. Chaisantikulwat, M. Mouis, G. Ghibaudo, C. Gallon, C. Fenouillet-Beranger, D.K. Maude, T. Skotnicki, S. Cristoloveanu, Solid State Electron. 51, 1494 (2007)
  • 49. De Michielis, IEEE Trans. Electron. Dev. 54, 2164 (2007)
  • 50. M. Lenzi, in: Proc. ULIS'2007
  • 51. A. Martinez, IEEE Trans. Electron Dev. 54, 2213 (2007)
  • 52. A. Martinez, J.R. Barker, A.R. Brown, N. Seoane, A. Asenov, to be presented at SISPAD 2008
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv114n502kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.